We proposed a method for suppressing arc ignition in mechanical contact devices using a transient current switch and a capacitor. We applied the method to conventional reed switches. For the electric circuit analysis, we clarified the momentary voltage-current characteristics at breaking operation of reed switches by FEM analysis. We could also estimate the capacitance of the contact electrodes at the metal bridge rupture by FEM analysis, and would derive the non-arcing condition using SPICE simulation. The suitable capacitor value in the transient current circuit for arc ignition suppression would be depend on the load impedance, the power supply, the time depending contact resistance R(t)s, the contact capacitance, and the minimum arc voltage and current.

A coplanar type lumped-element 6-pole microwave Chebyshev bandpass filter (BPF) of center frequency (f0) 2.0 GHz and fractional bandwidth (FBW) 1.0 % was designed. For the design method, theory of direct coupled resonator filters using K-inverters was employed. Coplanar type lumped-element BPFs are composed of a meander-line L and interdigital C elements. The frequency response was simulated and analyzed using an electromagnetic field simulator (Sonnet-EM). Further, the changes in f0 and FBW of the BPF were also realized by the mechanical tuning method.

In the move toward higher clock rates and advanced process technologies, designers of the latest electronic products are finding increasing silicon failure with respect to noise. On the other hand, the minimum dimension of patterns on LSIs is much smaller than the wavelength of exposure, making it difficult for LSI manufacturers to obtain high yield. In this paper, we present a solution to reduce power-supply noise in LSI microchips. The proposed design methodology also considers design for manufacturability (DFM) at the same time as power integrity. The method was successfully applied to the design of a system-on-chip (SOC), achieving a 13.1-13.2% noise reduction in power-supply voltage and uniformity of pattern density for chemical mechanical polishing (CMP).

A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.

Modern telecom and signal relays have been optimized to carry and switch low signals and to withstand high dielectric strength. Recent designs have extremely small physical dimensions and are comparatively cheap. Small size and low cost also make this type of relay very attractive for industrial and automotive applications. For industrial and automotive applications performance characteristics other than low and stable contact resistance values are of importance. While, for industrial applications, safety aspects and inductive load switching characteristics are of major importance, in automotive applications, high switching currents, inductive and lamp loads and high ambient temperatures are essential. Tests were carried out in order to determine the limitations of small size relays. The results obtained clearly show the unexpectedly high load range which signal relays are able to cover. Despite their small size, these relays can handle switching loads up to several hundred volts and currents up to 5 A. On top of the high switching current there is high excess current capability, and relays can work at extreme ambient temperatures between -55 and more than +105 degrees C.

Photonic crystal fiber (PCF) is a promising candidate for future transmission media due to its unobtainable features in a conventional single-mode fiber. We discuss some important problems to realize a PCF for transmission purpose. We also present recent progress on the PCF as a transmission media.

Various effective and draft legislations and rules in Europe (WEEE--Waste Electrical and Electronic Equipment ROHS--Restrictions on the use of certain substances and ELV--End of life of vehicles) and Japan (Recycling Law for Home Electric Appliances) have either targeted restrictions or fully banned on the use of lead, to be enforced from 2001, 2003 and 2006 onwards. Up to now, mainly tin-lead alloys have been used in electronics. The process temperatures usually applied have been in the range of 230. All currently discussed lead-free alternatives for professional electronics need process temperatures which are at least 20 higher. In addition, the process duration is significantly longer. The combination of higher process temperatures and longer duration results in significant thermal stress on electromechanical devices. In particular the precision mechanics of electromechanical relays must withstand the solder process with maximum process temperatures of 255 without dimensional changes. During the transition from tin-lead to lead-free solder processes all combinations of component surfaces and solder must be possible. The selection of pure Sn100 or SnCu0.7 as terminal surface allows mixed assemblies with tin-lead as well as lead-free solders. All tested combinations of terminal surface, PCB surface and solder showed good results. From these results it can be concluded that mixed assemblies are possible during the transition time without any negative impact on the reliability of the electronic devices.

We discuss photonic crystals (PhCs) with advanced micro/nano-structres which are semiconductor quantum dots (QDs) and micro electro-mechanical systems (MEMS) for the purpose of realizing novel classes of PhC devices in future photonic network system. After brief introduction on advantages to implement QDs and MEMS with PhCs, we discuss optical characterization of PhC microcavity containing self-assembled InAs QDs. Modification of emission spectrum of a QD ensemble due to the resonant cavity modes is demonstrated. We also point out the feasibility of low-threshold PhC lasers with QD active media in numerical analysis. A very low threshold current of 10 µA is numerically obtained for lasing action in the multi dimensional distributed feedback mode by using realistic material parameters. Then, the basic concept for MEMS-controlled PhC slab devices is described. We show numerical results that demonstrate some of interesting functions such as the intensity modulation and the tuning of resonant frequency of cavity mode. Finally, a preliminary experiment of MEMS-based switching operation in a PhC line-defect waveguide is demonstrated.

A mechanical phase shifter is designed for beam scanning in co-phase fed single-layer slotted waveguide arrays. The multiple-way power divider in this array consists of a series of π-junctions with one guide wavelength spacing in a feed waveguide. The movable narrow walls placed between the π-junctions perturb the guide wavelength as well as the phase of output ports. Method of Moment (MoM) analysis for one unit consisting of one movable plate and two junctions is conducted to estimate the available phase shift as well as the degradation of reflection. A phase shift of 86 degrees is predicted between two π-junctions under the condition of reflection below -20 dB; experiments at 4 GHz confirmed the design. The beam scanning capability of the arrays is also surveyed and the beam-scanning of about 10 degrees is predicted.

We developed a compact rf receiver subsystem using a high-Tc superconducting sharp skirt band-pass filter with a center frequency tuning function. A 24-pole hairpin-type 2 GHz microstrip-line filter was fabricated with YBa2Cu3Oy thin films deposited on a LaAlO3 substrate. Attenuation characteristics were more than 30 dB at 1 MHz apart from both the lower and the higher pass-band edges. For center frequency tuning, a 1-mm-thick dielectric sapphire plate was stacked on the filter, and the filtering characteristics were tuned by moving the plate using a piezoelectric bending actuator. The range of the center frequency modulation was more than 12 MHz with no degradation of the low-loss and sharp-skirt characteristics.

Fiber-optic MEMS which is fabricated by combining direct photo-lithography of optical fiber and silicon micro-machining is proposed. Preliminary results of micro-machining of optical fiber and variable telecommunication devices are presented.

In mechanical splice technology, loss change during temperature cycling is mainly caused by fiber slippage or shift at the interface between fibers and fiber clamping substrates. The upper limit of the fabrication accuracy of the fibers and substrates restricts the total number of fibers in a splice. To overcome this, we propose a novel fiber clamping method using the elasticity of the substrate surface. We clamp the fibers more strongly at the fiber clamping ends, where the fibers need a greater friction force than around the butt-joint, to hold them in position. Taking the case of an 8-fiber ribbon splice, we compared linear marks on the substrates with the boundary linewidth curves for the onset of slippage. We achieved an insertion loss change of less than 0.1 dB during a temperature cycling test in accordance with Telcordia Technologies test specification. When we clamp fibers using the plasticity of the substrate surface, we can also reduce the required fabrication accuracy. However, insufficient accuracy causes an unexpected loss change due to fiber shift as a result of a plastic flow on the substrate surface in contact with the fibers.

Using LiTaO3 and LiNbO3 single crystals, we wish to miniaturize a powerful ultrasonic vibrator. We studied the method of measuring mechanical fractures of resonators with good reproducibility and collected data on mechanical fractures of crystals due to high input electric power. Chip resonators with a 4 MHz and 8 MHz shear mode were selected for the test samples. The driving frequency was swept near the resonance frequency, the duration time was short enough to raise the resonant vibrations and the driving voltage increased in one-volt increments. The method is free from unstable temperature increases. Values of the fracture limit for the driving current were measured and transformed to mechanical vibration velocities. These showed a nearly normal distribution. It was a surprise that concavity in the crater was observed at the center of the 16 MHz LiNbO3 resonator due to high input power. It was confirmed that the elastic fracture limit was latently very high for LiNbO3 and LiTaO3 single crystals.

In this paper we report on the modeling and simulation of tunneling current in MOS devices including quantum mechanical effects. The simulation model features an original scheme for the self-consistent solution of Poisson and Schrodinger equations and it is used for the extraction of the oxide thickness, by fitting CV curves, and the calculation of the tunneling current. Simulations and experiments are compared for different device types and oxide thicknesses (1.5-6.5 nm) showing good agreement and pointing out the importance of quantum mechanical modeling and the presence of many tunneling mechanisms in ultra-thin oxide MOS devices.

With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.

In this paper we present a complete methodology for efficient electro-mechanical characterization of a CMOS compatible MEMS technology. Using an original test structure, the so-called "U-shape cantilever beam," we are able to determine all mechanical characteristics of force sensors constituted with elementary beams in a given technology. A complete set of electro-mechanical relations for the design of Microsystems have also been developed.

Electrochemomechanical deformation (ECMD) of poly(o-methoxyaniline) (PoMAn) film has been studied in various acid solutions, such as Cl-, HSO4-, BF4-, and p-toluene sulfate. The magnitude of ECMD of the film depends linearly on the degree of oxidation of the film similarly to the case of polyaniline (PAn). 2. 53% of deformation ratios along the stretched direction are obtained for 30% of reduction. In contrast to that of PAn, however, the ECMDs of PoMAn do not markedly depend on the kind of anions. Transient responses of current and deformation are investigated by the potential application stepwise and the diffusion coefficient of ions in films. The results are discussed in terms of the effect of substituted methoxy group.

We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.

This paper describes the design, characteristics, and applications of newly developed latching-type 1 2 and 1 8 single-mode fiber switches. These switches have been successfully fabricated using micromachine technology. To reduce insertion loss and light reflection, an index-matching oil is injected into the switches. The fabricated 1 2 switches exhibit a low insertion loss of 0.31 dB, high return loss of 51 dB, relatively fast switching speed of 2 ms, and low driving power of 9 mw. Switching operation is stable over 108 switching times. A practical 1 8 single-mode fiber switch was also constructed using seven 1 2 switches cascaded in three stages. The fabricated 1 2 and 1 8 switches have been applied to an NTT multichannel video distribution FTTH system to enhance system reliability.

The dipole-dipole interaction in the quantum mechanical treatment of the matter-radiation dynamics, is shown to give rise to split energy levels reminiscent of the nonlinear coupled spectral features as well as a self-sustained coherent modes. Wiener's theory of nonlinear random processes is applied to the second harmonic generation (SHG), leading also to coupled spectral pulling and dipping features, due to the dual noise sources in the fundamental and the harmonic polarizations. Furthermore, the nonlinear spectral features are suggested to be applied to implement quantum (qubit) gates for computation.