In flat panel display (FPD) lithography, a high resolution and large depth of focus (DOF) are required. The demands for high throughput have necessitated the use of large glass plates and exposure areas, thereby increasing focal unevenness and reducing process latitude. Thus, a large DOF is needed, particularly for high-resolution lithography. To manufacture future high-definition displays, 1.0μm line and space (L/S) is predicted to be required, and a technique to achieve this resolution with adequate DOF is necessary. To improve the resolution and DOF, resolution enhancement techniques (RETs) have been introduced. RETs such as off-axis illumination (OAI) and phase-shift masks (PSMs) have been widely used in semiconductor lithography, which utilizes narrowband illumination. To effectively use RETs in FPD lithography, modification for broadband illumination is required because FPD lithography utilizes such illumination as exposure light. However, thus far, RETs for broadband illumination have not been studied. This study aimed to develop techniques to achieve 1.0μm L/S resolution with an acceptable DOF. To this end, this paper proposes a method that combines our previously developed RET, namely, divided spectrum illumination (DSI), with an attenuated PSM (Att. PSM). Theoretical observations and simulations present the design of a PSM for broadband illumination. The transmittance and phase shift, whose degree varies according to the wavelength, are determined in terms of aerial image contrast and resist loss. The design of DSI for an Att. PSM is also discussed considering image contrast, DOF, and illumination intensity. Finally, the exposure results of 1.0μm L/S using DSI and PSM techniques are shown, demonstrating that a PSM greatly improves the resist profile, and DSI enhances the DOF by approximately 30% compared to conventional OAI. Thus, DSI and PSMs can be used in practical applications for achieving 1.0μm L/S with sufficient DOF.

New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.