New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns

Masaru SASAGO; Takahiro MATSUO; Kazuhiro YAMASHITA; Masayuki ENDO; Kouji MATSUOKA; Taichi KOIZUMI; Akiko KATSUYAMA; Noboru NOMURA

New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns

Masaru SASAGO, Takahiro MATSUO, Kazuhiro YAMASHITA, Masayuki ENDO, Kouji MATSUOKA, Taichi KOIZUMI, Akiko KATSUYAMA, Noboru NOMURA

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New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.416-424

Publication Date: 1994/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)

Category: Process Technology

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Masaru SASAGO, Takahiro MATSUO, Kazuhiro YAMASHITA, Masayuki ENDO, Kouji MATSUOKA, Taichi KOIZUMI, Akiko KATSUYAMA, Noboru NOMURA, "New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 3, pp. 416-424, March 1994, doi: .
Abstract: New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_416/_p

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@ARTICLE{e77-c_3_416,
author={Masaru SASAGO, Takahiro MATSUO, Kazuhiro YAMASHITA, Masayuki ENDO, Kouji MATSUOKA, Taichi KOIZUMI, Akiko KATSUYAMA, Noboru NOMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns},
year={1994},
volume={E77-C},
number={3},
pages={416-424},
abstract={New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns
T2 - IEICE TRANSACTIONS on Electronics
SP - 416
EP - 424
AU - Masaru SASAGO
AU - Takahiro MATSUO
AU - Kazuhiro YAMASHITA
AU - Masayuki ENDO
AU - Kouji MATSUOKA
AU - Taichi KOIZUMI
AU - Akiko KATSUYAMA
AU - Noboru NOMURA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - New critical-dimension controlling technique of off-axis illumination for aperiodic patterns has been developed. By means of arranging not-imaging additional pattern near 0.25 micron isolated patterns, the depth of focus of an isolated pattern was improved as well as the periodic patterns. Simulation and experimental results were verified on a 0.48 numerical-aperture, KrF excimer laser stepper. Using new deep-ultra-violet hardening technique for chemically amplified positive resist, the critical dimension loss of resist pattern was prevented. 0.25 micron design rule pattern was obtained with excellent mask linearity without critical-dimension-loss. The combination techniques are achieved quarter micron design rule complex circuit pattern layouts.
ER -