This paper discusses methods and numerical simulations of one and two dimensional profilings for an arbitrary convex conducting target using the electromagnetic backscattering. The inversions for profile reconstructions are based upon the modified extended physical optics method (EPO). The modified EPO method assumes the modified physical optics current properly over the entire surface of conducting scatterers. First, the cross sectional area along a line of sight is reconstructed by performing iteratively the Fourier transform of the backscattering field in the frequency domain. Second, the two dimensional profile is reconstructed by synthesizing the above one dimensional results for several incident angles. Numerical simulation results of the target profiling are shown for spheroids and cone-spheroid.

Three dimensional (3-D) optics offers potential advantages to the massively-parallel systems over electronics from the view point of information transfer. The purpose of this paper is to survey some aspects of the 3-D optical interconnection technology for the future massively-parallel computing systems. At first, the state-of-art of the current optoelectronic array devices to build the interconnection networks are described, with emphasis on those based on the semiconductor technology. Next, the principles, basic architectures, several examples of the 3-D optical interconnection systems in neural networks and multiprocessor systems are described. Finally, the issues that are needed to be solved for putting such technology into practical use are summarized.

Recent progress in high-speed semiconductor devices and integrated circuits (ICs) has outpaced the conventional measuring and testing instruments. With advent of ultrashort-pulse laser technology, the electro-optic sampling (EOS) technique based on the Pockels effect has become the most promising solution way of overcoming the frequency limit, whose bandwidth is approaching a terahertz. This paper reviews recent progress on the research of the EOS technniques for measuring ultrahigh-speed electronic devices and ICs. It describes both the principle of the EOS and the key technologies used for noncontact probing of ICs. Internal-node measurements of state-of-the-art high-speed ICs are also presented.