An equivalent circuit for designing a coherent power combiner using a quasi-optical resonator has been developed. In the resonator, large numbers of devices (HEMT, HBT, etc. ) are arrayed two dimensionally and mounted on a surface of a metal grooved-mirror. A newly developed equivalent circuit for the resonator has been constructed using a transmission-line model. Experiments performed at Ku-band have shown that oscillation frequencies in a 33 HEMT array oscillator can be predicted with errors of less than 1% by using this equivalent circuit.

This paper describes a diakoptics approach to the field simulation of shielded structures. If the structure can be divided so that the sliced cross section is homogeneously filled with a medium in the metal-surrounded region, the frequency domain diakoptics can be effectively formulated. In the method, the partial eigenfunction expansion (or modal expansion) is utilized at the interface between the divided structures, and the finite difference time domain calculation is used to characterize some of the divided parts. The synthesis of total characteristics is demonstrated using a simple example. The issue of term truncation in the eigenfunction expansion is also addressed and an effective algorithm for the term selection (mode selection) is proposed. The techniques described here are applicable to metal package designs for efficient structure optimization.

We present an experimental and theoretical study of multiple diffraction rings of a cw Ar+ laser beam from a nitrobenzene solution of BDN (bis-(4-dimethylaminodithiobenzil)-nickel) caused by the spatial self-phase modulation. We examine in detail the effect of the intensity and phase shift profiles of the beam in the nonlinear medium by comparing the measured ring patterns with the theoretical results based on the Fraunhofer diffraction. Although the thickness of the sample is only 180 µm in our experiment, it is found that the intensity and phase shift profiles are broadened owing to the self-defocusing effect. It is also found that the phase shift profile is further broadened by the thermal diffusion. These two effects become remarkable when the focused beam is used.

Recent advances in solid-state laser technology and ultrafast optics led to the generation of optical pulses as short as 5 femtoseconds with peak powers up to the subterawatt level from a compact kHz-repetition-rate all-solid-state laser. This source significantly pushes the frontiers of nonlinear optics. Exciting new possibilities include the investigation and exploitation of reversible nonlinear optical processes in solids at unprecedented intensity levels, the development of a compact laser-driven coherent soft-X ray source at photon energies near 1 keV, and the generation of attosecond xuv pulses. First, a brief review of recent milestones in the evolution of ultrafast laser technology is given, followed by a description of the high-power 5-fs source. The rest of the paper is devoted to applications in previously inaccessible regimes of nonlinear optics. We demonstrate that wide-gap dielectrics resist intensities in excess of 1014 W/cm2 in the sub-10 fs regime and the extension of high-harmonic generation in helium to wavelengths shorter than 2. 4 nm (Eph > 0. 5 keV).

Widely tunable coherent terahertz (THz)-wave generation was successfully demonstrated based on the laser light scattering from the lowest A1-symmetry polariton mode by using a Q-switched Nd:YAG laser pumping. This method exhibits multiple advantages like wide tunability (frequency: 0. 9-2. 2 THz), coherency and compactness of its system. In this paper, the general performances of this THz-wave generator, as well as the recent development of the system and its application are reported. Measurements of tunability, coherency, power, polarization, radiation angle, and divergence are shown. The cryogenic cooling of the crystal was performed in addition, and a more than one hundred times higher THz-wave output was observed. A spectroscopic application of our wave source is demonstrated by measuring the water vapor absorption.

The H-polarized diffraction by a wedge consisting of perfect conductor and lossless dielectric is investigated by employing the dual integral equations. Its physical optics diffraction coefficients are expressed in a finite series of cotangent functions weighted by the Fresnel reflection coefficients. A correction rule is extracted from the difference between the diffraction coefficients of the physical optics field and those of the exact solution to a perfectly conducting wedge. The angular period of the cotangent functions is changed to satisfy the edge condition at the tip of the wedge, and the poles of the cotangent functions are relocated to cancel out the incident field in the artificially complementary region. Numerical results assure that the presented correction is highly effective for reducing the error posed in the physical optics solution.

Equivalence of physical optics (PO) and aperture field integration method (AFIM) in the full 360 observation angle is discussed for polyhedron approximate reflectors; the necessary conditions of integration surface in AFIM for the equivalence to PO are presented. In addition to the condition that complete equivalent currents consisting of both geometrical optics (GO) reflected fields from the reflector and direct incident fields from the feed source are used, the integration surface should cap the reflector perfectly and should be in the illuminated region of the GO reflected field. Validity of the conditions is numerically confirmed for a two-dimensional (2-D) strip reflector, 3-D corner reflectors and a 2-D polyhedron approximate reflector.

The key concept of Physical Optics (PO), originally developed for a perfectly electric conductor (PEC), consists in that the high frequency fields on the scatterer surface are approximated by those which would exist on the infinite flat surface tangent to the scatterer. The scattered fields at arbitrary observation points are then calculated by integrating these fields on the scatterer. This general concept can be extended to arbitrary impedance surfaces. The asymptotic evaluation of this surface integration in terms of diffraction coefficients gives us the fields in analytical forms. In this paper, uniform PO diffraction coefficients for the impedance surfaces are presented and their high accuracy is verified numerically. These coefficients are providing us with the tool for the mechanism extraction of various high frequency methods such as aperture field integration method and Kirchhoff's method.

The growing availability of commercial foundry processes allows easy implementation of micro-opto-electro-mechanical systems (MOEMS) for a variety of applications. Such applications go beyond single devices to include whole optical systems on a chip, consisting of mirrors, gratings, Fresnel lenses and shutters, for example. Hinged and rotating structures, combined with powerful and compact thermal actuators, provide the means for positioning and operating these optical components. This paper presents examples of such systems built in a commercial polycrystalline silicon surface-micromachining process, the ARPA-sponsored Multi-User MEMS ProcesS (MUMPS). Examples range from optical sub-components to large mirror arrays, communication components, and micro-interferometers. Using the examples discussed in this paper, a designer can take advantage of commercially available surface-micromachining processes to design and develop MOEMS without the need for extensive in-house micromachining capabilities.

This paper verifies the accuracy of PO as applied to the scattering of dipole waves by a finite size reflector which is composed of strips on a grounded dielectric slab. By using the closed form expressions of reflected waves from the surface, PO calculation can be conducted straightforwardly. The calculated results are compared with the experimental ones for vertical and horizontal dipoles over a circular reflector.

The two variational principles, the Maupertuis' and the Hamilton's principle, are discussed in conjunction with the Fermat's principle. These two principles are shown to describe two different aspects of waves, thus resulting in the different geometry of wave propagation, the treatment of which is thus called the stationary optics or the dynamical optics, respectively. Comparisons for the results obtained from these geometrical optics are given. Another new variational principle valid for the dynamical waves reflected/refracted at the inter-faces, which has not yet been discovered so far, is also derived.

With increases in the speed of semiconductor devices and integrated circuits, the importance of internal testing with sufficient temporal resolution has been growing. This paper describes recently established electro-optic testing technologies based on pulse lasers and electro-optic crystal probes. Practicability, limitation and future issues are discussed.

Exploitation of air interfaces for mobile communications is rapidly increasing because of diversified service demands, technology trends and radio propagation conditions. This paper summarizes the radio and optic interaction devices and systems that can solve the future problems resulting from spreading demands in mobile multimedia communications. The concept of the Virtual Free Space Network (Radio Highway Network) is proposed for universal mobile access networks that can support any mobile service or radio air-interface. As one example of the proposed network, the optical TDMA network for radio is analyzed and results of some theoretical calculations are shown.

GaAs-based micromachining is a very attractive technique for integrating mechanical structures and active optical devices, such as laser diodes and photodiodes. For monolithically integrating mechanical parts onto laser diode wafers, the micromachining technique must be compatible with the laser diode fabrication process. Our micromachining technique features three major processes: epitaxitial growth (MOVPE) for both the structural and sacrificial layers, reactive dry-etching by chlorine for high-aspect, three-dimensional structures, and selective wet-etching by peroxide/ammonium hydroxide solution to release the moving parts. These processes are compatible with laser fabrication, so a cantilever beam structure can be fabricated at the same time as a laser diode structure. Furthermore, a single-crystal epitaxial layer has little residual stress, so precise microstructures can be obtained without significant deformation. We fabricated a microbeam resonator sensor composed of two laser diodes, a photodiode, and a micro-cantilever beam with an area of 400700 µm. The cantilever beam is 3 µm wide, 5 µm high, and either 110µm long for a 200-kHz resonant frequency or 50 µm long for a 1-MHz resonant frequency. The cantilever beam is excited by an intensity-modulated laser beam from an integrated excitation laser diode; the vibration signal is detected by a coupled cavity laser diode and a photodiode.

Wavelength-division multiplexing (WDM) optical switching networks are one of most attractive technologies in optical interconnections. By combining with time-division multiplexing (TDM) and space-division multiplexing (SDM) technologies, remarkably high-throughput interconnections may be accomplished. In this paper, we propose WDM switching networks with time-division multiplexed optical signals by using free-space optics. We also propose novel WDM interconnections, including multiple-wavelength light-sources, optical fibers and wavelength-selectable detectors. We successfully confirmed basic principles for the WDM interconnections.

A filter-type coplanar parallel electrode with periodically loaded reactances is introduced to construct guided-wave light modulators of limited bandwidth. The device was built by using a Ti:LiNbO3 optical waveguide and was operated successfully at 633 nm. Measured 3 dB bandwidth was 1 GHz centered at 14.8 GHz. Required modulating power for 1 rad phase modulation was 67.6 mW.

A novel optoelectronic mesoscopic neural device is proposed. This device operates in a neural manner, involving the electron interference and the laser threshold characteristics. The optical output is a 2–dimensional image, and can also be colored, if the light emitting elements are fabricated to form the picture elements in 3–colors, i.e. R, G, and B. The electron waveguiding in the proposed device is analyzed, on the basis of the analogy between the Schrödinger's equation and the Maxwell's wave equation. The nonlinear neural connection is achieved, as a result of the superposition an the interferences among electron waves transported through different waveguides. The sizes of the critical elements of this device are estimated to be within the reach of the present day technology. This device exceeds the conventional VLSI neurochips by many orders of magnitude, in the number of neurons per unit area, as well as in the speed of operation.

Coupling optics for a monolithic array LD module has been developed. High efficient and small sized confocal optics with aspheric lenses based on hyperbolic surfaces has been designed to achieve the uniformity of coupling loss. A small sized (7.2 cc) 4 channel array LD module with this optics was fabricated. This module has low (4.2 dB) and uniform (0.5 dB) coupling loss.

We describe a geometrical optics approach for the analysis of dielectric tapered waveguides. The method is based on the ray-optical treatment for wave-normal rays defined newly to waves of light in open structures. Geometrical optics fields are represented in terms of two kinds of wave-normal rays: leaky rays and guided rays. Since the behavior of these rays is different in the two regions separated at critical incidence, the geometrical optics fields have certain classes of discontinuity in a transition region between leaky and guided regions. Guided wave solutions are given as a superposition of guided rays that zigzag along the guides, all of which are totally reflected upon the interfaces. By including some leaky rays adjacent to the guided rays, we obtain more accurate guided wave solutions. Calculated results are in excellent agreement with wave optics solutions.

A modified illumination technique recently developed is known to improve the resolution and DOF (depth of focus) dramatically. But, it requires substantial modification in optical projection system and has some problems such as low throughput caused by low intensity and poor uniformity. And it is very difficult to adjust illumination source according to pattern changes. To solve these problems, we developed a new illumination technique, named ATOM (Advanced Tilted illumination On Mask) which applies the same concept as quadrupole illumination technique but gives many advantages over conventional techniques. This newly inserted mask gives drastic improvements in many areas such as DOF, resolution, low illumination intensity loss, and uniformity. In our experiments, we obtained best resolution of 0.28µm and 2.0µm DOF for 0.36µm feature sizes with i-line stepper, which is two times as wide as that of conventional illumination technique. We also obtained 0.22µm resolution and 2.0µm DOF for 0.28µm with 0.45NA KrF excimer laser stepper. For complex device patterns, more than 1.5 times wider DOF could be obtained compared to conventional illumination technique. From these results, we can conclude that 2nd generation of 64M DRAM with 0.3µm design rule can be printed with this technology combined with high NA (0.5) i-line steppers. With KrF excimer laser stepper, 256M DRAM can be printed with wide DOF.