This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.

Integrating the power supply and signal processing circuit into one chip is an important step towards achieving a system-on-chip. This paper reviews and looks at the current technologies and their trends for power supply components such as DC-DC converters, intelligent power LSIs, and thin-film magnetic devices for the system-on-chip. A device structure has been proposed for the system-on-chip that is based on a quasi-SOI technique, in which the buried oxide layer is partially removed from the SOI substrate. In this structure, the CMOS devices for the digital signal-processing circuit and the bipolar transistors are formed in a conventional SOI region, and the CMOS analog devices and high-voltage devices are formed in a quasi-SOI region.

A novel low-power dissipation and high-speed converter-control-IC has been developed for the transmitting amplifier in digital portable telephones. The IC consists mainly of CMOS devices to reduce the bias current. To improve circuit speed, bipolar transistors are used in the output stage of the operational amplifier and in the current sources of the oscillator because they have a larger current capability and smaller parasitic capacitance than CMOS devices. The IC has one-fifth the bias current of a conventional control circuit consisting of discrete devices, and it can operate up to a switching frequency of 3MHz. The small bias current increases converter efficiency, and the high switching frequency reduces converter size. Using this IC, converter loss is 17% less than that with a conventional control circuit.