Past and Future Technology for Mixed Signal LSI

Kenichi HATASAKO; Tetsuya NITTA; Masami HANE; Shigeto MAEGAWA

doi:10.1587/transele.E97.C.238

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Past and Future Technology for Mixed Signal LSI

Kenichi HATASAKO, Tetsuya NITTA, Masami HANE, Shigeto MAEGAWA

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Summary :

This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.

Publication: IEICE TRANSACTIONS on Electronics Vol.E97-C No.4 pp.238-244

Publication Date: 2014/04/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E97.C.238

Type of Manuscript: Special Section INVITED PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)

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Authors

Kenichi HATASAKO
  Renesas Electronics Corp.
Tetsuya NITTA
  Renesas Electronics Corp.
Masami HANE
  Renesas Electronics Corp.
Shigeto MAEGAWA
  Renesas Electronics Corp.

Keyword

Mixed Signal LSI, BiC-DMOS, analog, power IC, InGaZnO (IGZO)

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Kenichi HATASAKO, Tetsuya NITTA, Masami HANE, Shigeto MAEGAWA, "Past and Future Technology for Mixed Signal LSI" in IEICE TRANSACTIONS on Electronics, vol. E97-C, no. 4, pp. 238-244, April 2014, doi: 10.1587/transele.E97.C.238.
Abstract: This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.238/_p

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@ARTICLE{e97-c_4_238,
author={Kenichi HATASAKO, Tetsuya NITTA, Masami HANE, Shigeto MAEGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Past and Future Technology for Mixed Signal LSI},
year={2014},
volume={E97-C},
number={4},
pages={238-244},
abstract={This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.},
keywords={},
doi={10.1587/transele.E97.C.238},
ISSN={1745-1353},
month={April},}

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TY - JOUR
TI - Past and Future Technology for Mixed Signal LSI
T2 - IEICE TRANSACTIONS on Electronics
SP - 238
EP - 244
AU - Kenichi HATASAKO
AU - Tetsuya NITTA
AU - Masami HANE
AU - Shigeto MAEGAWA
PY - 2014
DO - 10.1587/transele.E97.C.238
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2014
AB - This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.
ER -