The reliability of a 266 nm cw (continuous-wave) solid-state laser under the influence of purge gas was considered. Scatterers on a mirror during long-term operation were ammonium sulfate (NH4SO4). The synthesis of ammonium sulfate was related to the amount of water in the purge gas. UV power decreased by scatterers when the purge was not conducted.

The process mapping of the ALD process of HfO2 using HfCl4 and H2O is reported. A thickness uniformity better than 3% was achieved over a 300 mm-wafer at a deposition rate of 0.52 Å/cycle. Usually, H2O purge period is set less than 10 sec to obtain reasonable throughput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO2/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.

In high-speed data networks, it is important to execute high-speed address resolution for packets at a router. To accomplish high-speed address resolution, address cache is effective. For HTTP accesses, it has been discussed that the Dual Zipfian Model can describe the distribution of the destination IP addresses, and it enabled us to derive the cache miss ratio in the steady state, i. e. , the cache miss ratio when the cache has full entries. However, at the time that systems are initialized or network topology is changed, the address cache has no address information or invalid address information. This paper shows the compulsory miss ratio which is the cache miss ratio when the cache has no address entry. In addition, we discuss the replacement policies of cache entries, for fast recovery of packet reachability, when the cache has information of unreachable address.