This paper presents a novel charge transfer CMOS readout circuit for an X-ray time delay and integration (TDI) array with a depth of 64. In this study, a charge transfer readout scheme based on CMOS technology is proposed to sum 64 stages of the TDI signal. In addition, a dead pixel elimination circuit is integrated within a chip, thus resolving the weakness of TDI arrays related to defective pixels. The proposed method is a novel CMOS solution for large depth TDI arrays. Thus, a high signal-to-noise ratio (SNR) can be acquired due to the increased TDI depth. The readout chip was fabricated with a 0.6 µm standard CMOS process for a 15064 CdTe X-ray detector array. The readout circuit was found to effectively increase the charge storage capacity up to 1.6108 electrons, providing an improved SNR by a factor of approximately 8. The measured equivalent noise charge resulting from the readout circuit was 1.68104 electrons, a negligible value compared to the shot noise from the detector.

For real time image processing, a readout circuit for an infrared focal plane array (IRFPA) involving a new edge detection technique has been proposed in this letter. A non-uniformity correction unit (NUC), essential in an IRFPA because of bad non-uniformity characteristics of IR sensors is eliminated in this circuit by using a noise tolerant edge detection technique. In addition, real time edge detection can be possible, because of pixel-level integration and parallel processing. The proposed readout circuit shows an approximately three to nine times better edge error rate than other available methods using pixel-level parallel processing.

A readout circuit involving new two step current mode background suppression is studied for 2-dimensional long wavelength infrared focal plane arrays (LWIR FPA's). Buffered direct injection (BDI) and feedback amplifier structure are adopted for input circuit and background suppression circuit, respectively. The pixel circuit is simple and has very small skimming error less than 0.1%. Enough calibration range over 50% as well as long integration time over 1.75 ms can be obtained using this readout circuit.