Substrate noise analysis has become increasingly important in recent LSI design. This is because substrate noise, which affects PLLs, causes jitter that results in timing error. Conventional analysis techniques of substrate noise are, however, impractical for large-scale designs that have hundreds of millions of transistors because the computational complexity is too huge. To solve this problem, we have developed a fast substrate noise analysis technique for large-scale designs, in which a chip is divided into multiple domains and the circuits of each domain are reduced into a macro model. Using this technique, we have designed a processor chip for use in the supercomputer (die size: 20 mm 21 mm, frequency: 3.2 GHz, transistor count: 350M). Computation time with this design is five times faster than that with a 1/3000 scale design using a conventional technique, while resulting discrepancy with measured period jitter is less than 15%.

Chip-level substrate coupling analysis uses F-matrix computation with slice-and-stack execution to include highly concentrated substrate resistivity gradient. The technique that has been applied to evaluation of device-level isolation structures against substrate coupling is now developed into chip-level substrate noise analysis. A time-series divided parasitic capacitance (TSDPC) model is equivalent to a transition controllable noise source (TCNS) circuit that captures noise generation in a CMOS digital circuit. A reference structure incorporating TCNS circuits and an array of on-chip high precision substrate noise monitors provides a basis for the verification of chip-level analysis of substrate coupling in a given technology. Test chips fabricated in two different wafer processings of 0.30-µm and 0.18-µm CMOS technologies demonstrate the universal availability of the proposed analysis techniques. Substrate noise simulation achieves no more than 3 dB discrepancy in peak amplitude compared to measurements with 100-ps/100-µV resolution, enabling precise evaluation of the impacts of the distant placements of sensitive devices from sources of noise as well as application of guard ring/band structures.