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Kenta MIURA Hiroki MIYAZAKI Osamu HANAIZUMI
We obtained blue photoluminescence from tantalum oxide films deposited by radio-frequency magnetron sputtering after annealing. The maximum peak intensity of the photoluminescence was observed from a sample annealed at 600 for 20 min, and the peak wavelength was approximately 430 nm. Tantalum oxide films that emit blue light may be useful materials for novel active optical devices utilizing Ta2O5/SiO2 multilayered photonic crystals.
Satoshi KAMIYAMA Hiroshi SUZUKI Pierre-Yves LESAICHERRE Akihiko ISHITANI
This paper describes the formation of ultra-thin tantalum oxide capacitors, using rapid thermal nitridation (RTN) of the storage-node polycrystalline-silicon surface prior to low-pressure chemical vapor deposition of tantalum oxide, using penta-ethoxy-tantalum [(Ta(OC2H5)5) and oxygen gas mixture. The films are annealed at 600-900 in dry O2 atmosphere. Densification of the as-deposited film by annealing in dry O2 is indispensable to the formation of highly reliable ultra-thin tantalum oxide capacitors. The RTN treatment reduces the SiO2 equivalent thickness and leakage current of the tantalum oxide film, and improves the time dependent dielectric breakdown characteristics of the film.