IEICE TRANSACTIONS on Electronics
Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs
Summary :
This paper describes the formation of ultra-thin tantalum oxide capacitors, using rapid thermal nitridation (RTN) of the storage-node polycrystalline-silicon surface prior to low-pressure chemical vapor deposition of tantalum oxide, using penta-ethoxy-tantalum [(Ta(OC2H5)5) and oxygen gas mixture. The films are annealed at 600-900
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.379-384
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Device Technology
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Satoshi KAMIYAMA, Hiroshi SUZUKI, Pierre-Yves LESAICHERRE, Akihiko ISHITANI, "Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 379-384, March 1994, doi: .
Abstract: This paper describes the formation of ultra-thin tantalum oxide capacitors, using rapid thermal nitridation (RTN) of the storage-node polycrystalline-silicon surface prior to low-pressure chemical vapor deposition of tantalum oxide, using penta-ethoxy-tantalum [(Ta(OC2H5)5) and oxygen gas mixture. The films are annealed at 600-900
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_379/_p
Copy
@ARTICLE{e77-c_3_379,
author={Satoshi KAMIYAMA, Hiroshi SUZUKI, Pierre-Yves LESAICHERRE, Akihiko ISHITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs},
year={1994},
volume={E77-C},
number={3},
pages={379-384},
abstract={This paper describes the formation of ultra-thin tantalum oxide capacitors, using rapid thermal nitridation (RTN) of the storage-node polycrystalline-silicon surface prior to low-pressure chemical vapor deposition of tantalum oxide, using penta-ethoxy-tantalum [(Ta(OC2H5)5) and oxygen gas mixture. The films are annealed at 600-900
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 379
EP - 384
AU - Satoshi KAMIYAMA
AU - Hiroshi SUZUKI
AU - Pierre-Yves LESAICHERRE
AU - Akihiko ISHITANI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - This paper describes the formation of ultra-thin tantalum oxide capacitors, using rapid thermal nitridation (RTN) of the storage-node polycrystalline-silicon surface prior to low-pressure chemical vapor deposition of tantalum oxide, using penta-ethoxy-tantalum [(Ta(OC2H5)5) and oxygen gas mixture. The films are annealed at 600-900
ER -
English
