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Takashi SATO Junji ICHIMIYA Nobuto ONO Masanori HASHIMOTO
In this paper, we propose a methodology for calculating on-chip temperature gradient and leakage power distributions. It considers the interdependence between leakage power and local temperature using a general circuit simulator as a differential equation solver. The proposed methodology can be utilized in the early stages of the design cycle as well as in the final verification phase. Simulation results proved that consideration of the temperature dependence of the leakage power is critically important for achieving reliable physical designs since the conventional temperature analysis that ignores the interdependence underestimates leakage power considerably and may overlook potential thermal runaway.
Takashi SATO Junji ICHIMIYA Nobuto ONO Koutaro HACHIYA Masanori HASHIMOTO
This paper quantitatively analyzes thermal gradient of SoC and proposes a thermal flattening procedure. First, the impact of dominant parameters, such as area occupancy of memory/logic block, power density, and floorplan on thermal gradient are studied quantitatively. Temperature difference is also evaluated from timing and reliability standpoints. Important results obtained here are 1) the maximum temperature difference increases with higher memory area occupancy and 2) the difference is very floorplan sensitive. Then, we propose a procedure to amend thermal gradient. A slight floorplan modification using the proposed procedure improves on-chip thermal gradient significantly.