The composition of CMOS control circuit and Vertical-Double-Diffused-MOS (VDMOS) power device on a single chip by using Silicon-On-Insulator (SOI) structure is formulated. Because all the MOS transistors in the CMOS control circuit are not isolated by the trenches, the interference phenomenon between SOI and the substrate is studied. Latch-up is detected thus, the construction of a mechanism to prevent latch-up is also studied. To evaluate the SOI CMOS characteristics the effects of voltage fluctuation on the substrate is analized. The latch-up mechanism is also analized by transient device simulation. As a result of this study a guideline for the immunity of latch-up is established, the features of the mechanism are as follows. First, the latch-up trigger is the charging current of the condenser composed of the oxide layer in the SOI structure. Second, latch-up is normally caused by positive feedback between the parasitic PNP-transistor and the parasitic NPN-transistor. However, in this case, electron diffusion toward the P-well is dominant after the parasitic PNP-transistor falls into high level injection. This feature is different from the conventional mechanism. The high level injection is caused by carrier accumulation in the N- region. Considering the above, it is necessary to; (1) reduce the charging current of the condenser, (2) reduce the parasitic resistance in the N- region of SOI, and (3) reduce the carrier accumulation in SOI for immunity from latch-up.