The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.

This paper presents CrtSmile--a CAD tool for the automatic extraction of layout-dependent substrate effects for RF MOSFET modeling. CrtSmile incorporates a new scalable substrate model, which depends not only on the geometric layout information of a transistor (the number of gate fingers, finger width, channel length and bulk contact location), but also on the transistor layout and bulk patterns. We show that this model is simple to extract and has good agreement with measured data for a 0.35 µm CMOS process. CrtSmile reads in the layout information of RF transistors in the CIF/GDSII format, performs a pattern-based layout extraction to recognize the transistor layout and bulk patterns. A scalable layout-dependent substrate model is automatically generated and attached to the standard BSIM3 device model as a sub-circuit for use in circuit simulation. A low noise amplifier is evaluated with the proposed CrtSmile tool, showing the importance of layout effects for RF transistor substrate modeling.

Low voltage (LV) analog circuit design techniques are addressed in this tutorial. In particular, (i) technology considerations; (ii) transistor model capable to provide performance and power tradeoffs; (iii) low voltage implementation techniques capable to reduce the power supply requirements, such as bulk-driven, floating-gate, and self-cascode MOSFETs; (iv) basic LV building blocks; (v) multi-stage frequency compensation topologies; and (vi) fully-differential and fully-balanced systems.

The investigation of device functions required from the systems point of view will be important for the development of the next generation of VLSI devices and systems. In this paper, a super pass transistor (SPT) model is presented as a quantum device candidate for future VLSI systems based on multiple-valued logic. A possible quantum device structure for the SPT model is also described, which employs the concepts of a lateral-resonant-tunneling quantum-dot transistor and a heterostructure field-effect transistor. Since it has the powerful capability of detecting multiple signal levels, the SPT will be useful for the implementation of highly compact multiple-valued VLSI systems. To exploit the functionality of the SPT, a super pass gate (SP-gate) corresponding to a single SPT is proposed as a multiple-valued universal logic module. The mathematical properties of the SP-gate are discussed. A design method for a multiple-valued SP-gate network is presented. An application of SP-gates to a multiple-valued image processing system is also demonstrated. The SP-gate network for the multiple-valued image processing system is evaluated in comparison with the corresponding NMOS implementation in terms of the number of transistors, interconnections and cascaded transistor stages. The size of a generalized series-parallel SP-gate network is also evaluated in comparison with a functionally equivalent multiple-valued series-parallel MOS pass transistor network. The results show that highly compact multiple-valued VLSI systems can be achieved if the SPT-model can be realized by an actual quantum device.

An efficient algorithm is given for finding all solutions of piecewise-linear resistive circuits containing nonseparable transistor models such as the Gummel-Poon model or the Shichman-Hodges model. The proposed algorithm is simple and can be easily programmed using recursive functions.

An efficient algorithm is presented for finding all solutions of piecewise-linear resistive circuits containing sophisticated transistor models such as the Gummel-Poon model or the Shichman-Hodges model. When a circuit contains these nonseparable models, the hybrid equation describing the circuit takes a special structure termed pairwise-separability (or tuplewise-separability). This structure is effectively exploited in the new algorithm. A numerical example is given, and it is shown that all solutions are computed very rapidly.