A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 20
Toshihiro MATSUDA
Hiroaki TAKEUCHI
Akira MURAMATSU
Hideyuki IWATA
Takashi OHZONE
Kyoji YAMASHITA
Norio KOIKE
Ken-ichiro TATSUUMA
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Toshihiro MATSUDA, Hiroaki TAKEUCHI, Akira MURAMATSU, Hideyuki IWATA, Takashi OHZONE, Kyoji YAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA, "A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 5, pp. 811-816, May 2005, doi: 10.1093/ietele/e88-c.5.811.
Abstract: A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 20
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.5.811/_p
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@ARTICLE{e88-c_5_811,
author={Toshihiro MATSUDA, Hiroaki TAKEUCHI, Akira MURAMATSU, Hideyuki IWATA, Takashi OHZONE, Kyoji YAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission},
year={2005},
volume={E88-C},
number={5},
pages={811-816},
abstract={A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 20
keywords={},
doi={10.1093/ietele/e88-c.5.811},
ISSN={},
month={May},}
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TY - JOUR
TI - A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission
T2 - IEICE TRANSACTIONS on Electronics
SP - 811
EP - 816
AU - Toshihiro MATSUDA
AU - Hiroaki TAKEUCHI
AU - Akira MURAMATSU
AU - Hideyuki IWATA
AU - Takashi OHZONE
AU - Kyoji YAMASHITA
AU - Norio KOIKE
AU - Ken-ichiro TATSUUMA
PY - 2005
DO - 10.1093/ietele/e88-c.5.811
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2005
AB - A test structure and method for two-dimensional analysis of fabrication process variation of MOSFET using a photoemission microscope are presented. Arrays of 20
ER -