IEICE TRANSACTIONS on Electronics
High Performance Power MOSFETs by Wing-Cell Structure Design
Summary :
A new cell structure Power MOSFET, which exhibits a lower on-state resistance and lower gate charge than the conventional layout geometry, is proposed in this research. Vertical Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. Typically, closed cell design has lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.5 pp.591-595
- Publication Date
- 2006/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.5.591
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
- Category
- Si Devices and Processes
Authors
Keyword
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Feng-Tso CHIEN, Chien-Nan LIAO, Chi-Ling WANG, Hsien-Chin CHIU, "High Performance Power MOSFETs by Wing-Cell Structure Design" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 5, pp. 591-595, May 2006, doi: 10.1093/ietele/e89-c.5.591.
Abstract: A new cell structure Power MOSFET, which exhibits a lower on-state resistance and lower gate charge than the conventional layout geometry, is proposed in this research. Vertical Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. Typically, closed cell design has lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.5.591/_p
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@ARTICLE{e89-c_5_591,
author={Feng-Tso CHIEN, Chien-Nan LIAO, Chi-Ling WANG, Hsien-Chin CHIU, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Performance Power MOSFETs by Wing-Cell Structure Design},
year={2006},
volume={E89-C},
number={5},
pages={591-595},
abstract={A new cell structure Power MOSFET, which exhibits a lower on-state resistance and lower gate charge than the conventional layout geometry, is proposed in this research. Vertical Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. Typically, closed cell design has lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.},
keywords={},
doi={10.1093/ietele/e89-c.5.591},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - High Performance Power MOSFETs by Wing-Cell Structure Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 591
EP - 595
AU - Feng-Tso CHIEN
AU - Chien-Nan LIAO
AU - Chi-Ling WANG
AU - Hsien-Chin CHIU
PY - 2006
DO - 10.1093/ietele/e89-c.5.591
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2006
AB - A new cell structure Power MOSFET, which exhibits a lower on-state resistance and lower gate charge than the conventional layout geometry, is proposed in this research. Vertical Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. Typically, closed cell design has lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.
ER -
English
