IEICE TRANSACTIONS on Electronics
High Power GaN-HEMT for Wireless Base Station Applications
Summary :
Highly reliable GaN high electron mobility transistors (HEMTs) are demonstrated for 3G-wireless base station applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50 V is addressed with high efficiency under W-CDMA signals. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier W-CDMA signals. Memory effect and temperature characteristics are also discussed. A stable operation including gate leakage current under RF stress testing for 1000 h is demonstrated at a drain bias voltage of 60 V. AlGaN/GaN HEMTs on an n-type doped 3-inch SiC substrate is introduced towards low cost manufacturing for the first time.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E89-C No.5 pp.608-615
- Publication Date
- 2006/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e89-c.5.608
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
- Category
- Compound Semiconductor Devices
Authors
Keyword
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Toshihide KIKKAWA, Kazukiyo JOSHIN, "High Power GaN-HEMT for Wireless Base Station Applications" in IEICE TRANSACTIONS on Electronics,
vol. E89-C, no. 5, pp. 608-615, May 2006, doi: 10.1093/ietele/e89-c.5.608.
Abstract: Highly reliable GaN high electron mobility transistors (HEMTs) are demonstrated for 3G-wireless base station applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50 V is addressed with high efficiency under W-CDMA signals. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier W-CDMA signals. Memory effect and temperature characteristics are also discussed. A stable operation including gate leakage current under RF stress testing for 1000 h is demonstrated at a drain bias voltage of 60 V. AlGaN/GaN HEMTs on an n-type doped 3-inch SiC substrate is introduced towards low cost manufacturing for the first time.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e89-c.5.608/_p
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@ARTICLE{e89-c_5_608,
author={Toshihide KIKKAWA, Kazukiyo JOSHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Power GaN-HEMT for Wireless Base Station Applications},
year={2006},
volume={E89-C},
number={5},
pages={608-615},
abstract={Highly reliable GaN high electron mobility transistors (HEMTs) are demonstrated for 3G-wireless base station applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50 V is addressed with high efficiency under W-CDMA signals. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier W-CDMA signals. Memory effect and temperature characteristics are also discussed. A stable operation including gate leakage current under RF stress testing for 1000 h is demonstrated at a drain bias voltage of 60 V. AlGaN/GaN HEMTs on an n-type doped 3-inch SiC substrate is introduced towards low cost manufacturing for the first time.},
keywords={},
doi={10.1093/ietele/e89-c.5.608},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - High Power GaN-HEMT for Wireless Base Station Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 608
EP - 615
AU - Toshihide KIKKAWA
AU - Kazukiyo JOSHIN
PY - 2006
DO - 10.1093/ietele/e89-c.5.608
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E89-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2006
AB - Highly reliable GaN high electron mobility transistors (HEMTs) are demonstrated for 3G-wireless base station applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50 V is addressed with high efficiency under W-CDMA signals. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier W-CDMA signals. Memory effect and temperature characteristics are also discussed. A stable operation including gate leakage current under RF stress testing for 1000 h is demonstrated at a drain bias voltage of 60 V. AlGaN/GaN HEMTs on an n-type doped 3-inch SiC substrate is introduced towards low cost manufacturing for the first time.
ER -
English
