A Novel Power MOSFET Structure with Shallow Junction Dual Well Design
Summary :
Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, simulated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell pitch can be reduced and results in an increased cell density. The reduced cell pitch and increased cell density improves the gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.937-942
- Publication Date
- 2007/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.5.937
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
- Compound Semiconductor and Power Devices
Authors
Keyword
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Chien-Nan LIAO, Feng-Tso CHIEN, Chi-Ling WANG, Hsien-Chin CHIU, Yi-Jen CHAN, "A Novel Power MOSFET Structure with Shallow Junction Dual Well Design" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 937-942, May 2007, doi: 10.1093/ietele/e90-c.5.937.
Abstract: Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, simulated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell pitch can be reduced and results in an increased cell density. The reduced cell pitch and increased cell density improves the gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.937/_p
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@ARTICLE{e90-c_5_937,
author={Chien-Nan LIAO, Feng-Tso CHIEN, Chi-Ling WANG, Hsien-Chin CHIU, Yi-Jen CHAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel Power MOSFET Structure with Shallow Junction Dual Well Design},
year={2007},
volume={E90-C},
number={5},
pages={937-942},
abstract={Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, simulated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell pitch can be reduced and results in an increased cell density. The reduced cell pitch and increased cell density improves the gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.},
keywords={},
doi={10.1093/ietele/e90-c.5.937},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - A Novel Power MOSFET Structure with Shallow Junction Dual Well Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 937
EP - 942
AU - Chien-Nan LIAO
AU - Feng-Tso CHIEN
AU - Chi-Ling WANG
AU - Hsien-Chin CHIU
AU - Yi-Jen CHAN
PY - 2007
DO - 10.1093/ietele/e90-c.5.937
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, simulated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell pitch can be reduced and results in an increased cell density. The reduced cell pitch and increased cell density improves the gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.
ER -
English
