FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Summary :
As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. Many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it in both the time domain and frequency domain.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.776-779
- Publication Date
- 2008/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.5.776
- Type of Manuscript
- Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Hochul LEE, Youngchang YOON, Ickhyun SONG, Hyungcheol SHIN, "FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 5, pp. 776-779, May 2008, doi: 10.1093/ietele/e91-c.5.776.
Abstract: As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. Many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it in both the time domain and frequency domain.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.776/_p
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@ARTICLE{e91-c_5_776,
author={Hochul LEE, Youngchang YOON, Ickhyun SONG, Hyungcheol SHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs},
year={2008},
volume={E91-C},
number={5},
pages={776-779},
abstract={As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. Many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it in both the time domain and frequency domain.},
keywords={},
doi={10.1093/ietele/e91-c.5.776},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 776
EP - 779
AU - Hochul LEE
AU - Youngchang YOON
AU - Ickhyun SONG
AU - Hyungcheol SHIN
PY - 2008
DO - 10.1093/ietele/e91-c.5.776
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. Many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it in both the time domain and frequency domain.
ER -
English
