A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit

Toshifumi NAKATANI; Koichi OGAWA

doi:10.1093/ietele/e91-c.6.844

A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit

Toshifumi NAKATANI, Koichi OGAWA

Full Text Views

0

Cite this

Summary :

A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.

Publication: IEICE TRANSACTIONS on Electronics Vol.E91-C No.6 pp.844-853

Publication Date: 2008/06/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1093/ietele/e91-c.6.844

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)

Category

Cite this

Copy

Toshifumi NAKATANI, Koichi OGAWA, "A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit" in IEICE TRANSACTIONS on Electronics, vol. E91-C, no. 6, pp. 844-853, June 2008, doi: 10.1093/ietele/e91-c.6.844.
Abstract: A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.6.844/_p

Copy

@ARTICLE{e91-c_6_844,
author={Toshifumi NAKATANI, Koichi OGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit},
year={2008},
volume={E91-C},
number={6},
pages={844-853},
abstract={A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.},
keywords={},
doi={10.1093/ietele/e91-c.6.844},
ISSN={1745-1353},
month={June},}

Copy

TY - JOUR
TI - A Low Distortion and Low Noise Differential Amplifier Suitable for 3G LTE Applications Using the Even- and Odd-Mode Impedance Differences of a Bias Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 844
EP - 853
AU - Toshifumi NAKATANI
AU - Koichi OGAWA
PY - 2008
DO - 10.1093/ietele/e91-c.6.844
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2008
AB - A low distortion and low noise differential amplifier using the difference between the even- and odd-mode impedances is proposed. In order to realize an amplifier with high OIP3 and low NF characteristics, the impedance of the bias circuit should be low (<300 Ω) at the difference frequency and high (>4 kΩ) at the carrier frequency. Although the frequency response of the bias circuit impedance can only meet these conditions with difficulty, owing to the 20 MHz Tx signal bandwidth for 3G LTE, the proposed amplifier can achieve the impedance difference using the properties of a differential configuration where the difference frequency signal is the even-mode and the carrier frequency is the odd-mode. It has been demonstrated that the NF of the proposed amplifier, which has been fabricated in 0.18 µm SiGe BiCMOS technology operating at 2.14 GHz, can be kept to 1.6 dB or less and an OIP3 of 9.0 dBm can be achieved, which is 3 dB higher than that of a conventional amplifier, in the condition where the power gain is greater than 18 dB.
ER -