A New Soft-Error Phenomenon is ULSI SRAM's--Inverted Dependence of Soft-Error Rate on Cycle Time--
Summary :
A new soft-error phenomenon in which the soft-error rate (SER) decreases as cycle time becomes shorter has been found in static RAM's (SRAM's) employing a high-resistive load memory cell. This inverted dependence is observed during the read cycle in the SRAM's involving the PMOS bit-line load. The SER at the cycle time of 100 ns is reduced by 1.5-orders of magnitude compared with that of conventional SRAM's. The convertional dependence of SER on cycle time has been explained with the time constant to charge up the "High" storage node potential through the high-resistive load. The mechanism of the inverted dependence becomes clear in consideration of the time constant of the potential drop of the "High" storage node. The analysis is applied to explain that three kinds of dependence of SER on cycle time, which are the conventional dependence, the inverted dependence, and no dependence, will be observed when the following cell parameters are changed. One is the threshold voltage of driver transistors in the cell, and the other is the impedance of the high-resistive load.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.4 pp.853-858
- Publication Date
- 1991/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on LSI Memories)
- Category
- SRAM
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Shuji MURAKAMI, Tomohisa WADA, Masanao EINO, Motomu UKITA, Yasumasa NISHIMURA, Kimio SUZUKI, Kenji ANAMI, "A New Soft-Error Phenomenon is ULSI SRAM's--Inverted Dependence of Soft-Error Rate on Cycle Time--" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 4, pp. 853-858, April 1991, doi: .
Abstract: A new soft-error phenomenon in which the soft-error rate (SER) decreases as cycle time becomes shorter has been found in static RAM's (SRAM's) employing a high-resistive load memory cell. This inverted dependence is observed during the read cycle in the SRAM's involving the PMOS bit-line load. The SER at the cycle time of 100 ns is reduced by 1.5-orders of magnitude compared with that of conventional SRAM's. The convertional dependence of SER on cycle time has been explained with the time constant to charge up the "High" storage node potential through the high-resistive load. The mechanism of the inverted dependence becomes clear in consideration of the time constant of the potential drop of the "High" storage node. The analysis is applied to explain that three kinds of dependence of SER on cycle time, which are the conventional dependence, the inverted dependence, and no dependence, will be observed when the following cell parameters are changed. One is the threshold voltage of driver transistors in the cell, and the other is the impedance of the high-resistive load.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_4_853/_p
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@ARTICLE{e74-c_4_853,
author={Shuji MURAKAMI, Tomohisa WADA, Masanao EINO, Motomu UKITA, Yasumasa NISHIMURA, Kimio SUZUKI, Kenji ANAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Soft-Error Phenomenon is ULSI SRAM's--Inverted Dependence of Soft-Error Rate on Cycle Time--},
year={1991},
volume={E74-C},
number={4},
pages={853-858},
abstract={A new soft-error phenomenon in which the soft-error rate (SER) decreases as cycle time becomes shorter has been found in static RAM's (SRAM's) employing a high-resistive load memory cell. This inverted dependence is observed during the read cycle in the SRAM's involving the PMOS bit-line load. The SER at the cycle time of 100 ns is reduced by 1.5-orders of magnitude compared with that of conventional SRAM's. The convertional dependence of SER on cycle time has been explained with the time constant to charge up the "High" storage node potential through the high-resistive load. The mechanism of the inverted dependence becomes clear in consideration of the time constant of the potential drop of the "High" storage node. The analysis is applied to explain that three kinds of dependence of SER on cycle time, which are the conventional dependence, the inverted dependence, and no dependence, will be observed when the following cell parameters are changed. One is the threshold voltage of driver transistors in the cell, and the other is the impedance of the high-resistive load.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - A New Soft-Error Phenomenon is ULSI SRAM's--Inverted Dependence of Soft-Error Rate on Cycle Time--
T2 - IEICE TRANSACTIONS on Electronics
SP - 853
EP - 858
AU - Shuji MURAKAMI
AU - Tomohisa WADA
AU - Masanao EINO
AU - Motomu UKITA
AU - Yasumasa NISHIMURA
AU - Kimio SUZUKI
AU - Kenji ANAMI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1991
AB - A new soft-error phenomenon in which the soft-error rate (SER) decreases as cycle time becomes shorter has been found in static RAM's (SRAM's) employing a high-resistive load memory cell. This inverted dependence is observed during the read cycle in the SRAM's involving the PMOS bit-line load. The SER at the cycle time of 100 ns is reduced by 1.5-orders of magnitude compared with that of conventional SRAM's. The convertional dependence of SER on cycle time has been explained with the time constant to charge up the "High" storage node potential through the high-resistive load. The mechanism of the inverted dependence becomes clear in consideration of the time constant of the potential drop of the "High" storage node. The analysis is applied to explain that three kinds of dependence of SER on cycle time, which are the conventional dependence, the inverted dependence, and no dependence, will be observed when the following cell parameters are changed. One is the threshold voltage of driver transistors in the cell, and the other is the impedance of the high-resistive load.
ER -
English
