1.8-Gb/s High-Speed Multichip Switching Module Using Copper-Polyimide Multilayer Substrate

Naoaki YAMANAKA; Takaaki OHSAKI; Shiro KIKUCHI; Taichi KON; Shinichi SASAKI

1.8-Gb/s High-Speed Multichip Switching Module Using Copper-Polyimide Multilayer Substrate

Naoaki YAMANAKA, Takaaki OHSAKI, Shiro KIKUCHI, Taichi KON, Shinichi SASAKI

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This paper describes a high-speed multichip (3232 space-division) switching module for high-definition TV broadcasting and switching systems. This newly developed module employs new Si-bipolar SST switching LSIs and a multi-layer substrate with a polyimide dielectric and a fine pattern of copper conductors. This substrate contains matrix-shaped thin film registers for terminated transmission and a spiral via hole structure to increase fabrication reliability. The module has 50 ohm characteristic impedance transmission lines with a deviation of less than 2.5%. The multichip module can handle a signal speed of 1.8 Gb/s using 1 : 1 and 1 : n connections. This technology allows a dramatic reduction in module size to 1/20 of that possible with conventional surface-mounted techniques.

Publication: IEICE TRANSACTIONS on Electronics Vol.E74-C No.8 pp.2301-2308

Publication Date: 1991/08/25

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Type of Manuscript: Special Section PAPER (Special Issue on Advanced Packaging Technology for Microelectronics Manufacturing)

Category: Multi Chip Module

Authors

Naoaki YAMANAKA
Takaaki OHSAKI
Shiro KIKUCHI
Taichi KON
Shinichi SASAKI

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Naoaki YAMANAKA, Takaaki OHSAKI, Shiro KIKUCHI, Taichi KON, Shinichi SASAKI, "1.8-Gb/s High-Speed Multichip Switching Module Using Copper-Polyimide Multilayer Substrate" in IEICE TRANSACTIONS on Electronics, vol. E74-C, no. 8, pp. 2301-2308, August 1991, doi: .
Abstract: This paper describes a high-speed multichip (3232 space-division) switching module for high-definition TV broadcasting and switching systems. This newly developed module employs new Si-bipolar SST switching LSIs and a multi-layer substrate with a polyimide dielectric and a fine pattern of copper conductors. This substrate contains matrix-shaped thin film registers for terminated transmission and a spiral via hole structure to increase fabrication reliability. The module has 50 ohm characteristic impedance transmission lines with a deviation of less than 2.5%. The multichip module can handle a signal speed of 1.8 Gb/s using 1 : 1 and 1 : n connections. This technology allows a dramatic reduction in module size to 1/20 of that possible with conventional surface-mounted techniques.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_8_2301/_p

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@ARTICLE{e74-c_8_2301,
author={Naoaki YAMANAKA, Takaaki OHSAKI, Shiro KIKUCHI, Taichi KON, Shinichi SASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={1.8-Gb/s High-Speed Multichip Switching Module Using Copper-Polyimide Multilayer Substrate},
year={1991},
volume={E74-C},
number={8},
pages={2301-2308},
abstract={This paper describes a high-speed multichip (3232 space-division) switching module for high-definition TV broadcasting and switching systems. This newly developed module employs new Si-bipolar SST switching LSIs and a multi-layer substrate with a polyimide dielectric and a fine pattern of copper conductors. This substrate contains matrix-shaped thin film registers for terminated transmission and a spiral via hole structure to increase fabrication reliability. The module has 50 ohm characteristic impedance transmission lines with a deviation of less than 2.5%. The multichip module can handle a signal speed of 1.8 Gb/s using 1 : 1 and 1 : n connections. This technology allows a dramatic reduction in module size to 1/20 of that possible with conventional surface-mounted techniques.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - 1.8-Gb/s High-Speed Multichip Switching Module Using Copper-Polyimide Multilayer Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 2301
EP - 2308
AU - Naoaki YAMANAKA
AU - Takaaki OHSAKI
AU - Shiro KIKUCHI
AU - Taichi KON
AU - Shinichi SASAKI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1991
AB - This paper describes a high-speed multichip (3232 space-division) switching module for high-definition TV broadcasting and switching systems. This newly developed module employs new Si-bipolar SST switching LSIs and a multi-layer substrate with a polyimide dielectric and a fine pattern of copper conductors. This substrate contains matrix-shaped thin film registers for terminated transmission and a spiral via hole structure to increase fabrication reliability. The module has 50 ohm characteristic impedance transmission lines with a deviation of less than 2.5%. The multichip module can handle a signal speed of 1.8 Gb/s using 1 : 1 and 1 : n connections. This technology allows a dramatic reduction in module size to 1/20 of that possible with conventional surface-mounted techniques.
ER -