Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's

Kazuo SUKEGAWA; Seiichiro KAWAMURA

Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's

Kazuo SUKEGAWA, Seiichiro KAWAMURA

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Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔV_th(b) is twenty times as large as ΔV_th(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β₀ in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from V_th (f) dependence on back gate bias. For L_eff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase g_m(f) through the effect equivalent to back gate bias. From g_m(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, g_m is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.12 pp.1484-1490

Publication Date: 1992/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)

Category: Hot Carrier

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Kazuo SUKEGAWA, Seiichiro KAWAMURA, "Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 12, pp. 1484-1490, December 1992, doi: .
Abstract: Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔV_th(b) is twenty times as large as ΔV_th(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β₀ in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from V_th (f) dependence on back gate bias. For L_eff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase g_m(f) through the effect equivalent to back gate bias. From g_m(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, g_m is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_12_1484/_p

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@ARTICLE{e75-c_12_1484,
author={Kazuo SUKEGAWA, Seiichiro KAWAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's},
year={1992},
volume={E75-C},
number={12},
pages={1484-1490},
abstract={Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔV_th(b) is twenty times as large as ΔV_th(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β₀ in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from V_th (f) dependence on back gate bias. For L_eff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase g_m(f) through the effect equivalent to back gate bias. From g_m(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, g_m is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 1484
EP - 1490
AU - Kazuo SUKEGAWA
AU - Seiichiro KAWAMURA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1992
AB - Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔV_th(b) is twenty times as large as ΔV_th(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β₀ in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from V_th (f) dependence on back gate bias. For L_eff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase g_m(f) through the effect equivalent to back gate bias. From g_m(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, g_m is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.
ER -