Plasma-Parameter-Extraction for Minimizing Contamination and Damage in RIE Processes
Summary :
The two most important parameters in reactive ion etching process, ion bombardment energy and flux, were extracted through a simple RF waveform measurement at the excitation electrode in a conventional cathode-coupled plasma RIE system. By using the extracted plasma parameters, damage and contamination in Si substrates induced by reactive ion etching in a SiCl4 plasma were investigated. A very convenient map representation of ion energy and ion flux was introduced in understanding the etching process occurring in the RIE system.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.839-843
- Publication Date
- 1992/07/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra Clean Technology)
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Takeo YAMASHITA, Satoshi HASAKA, Iwao NATORI, Tadahiro OHMI, "Plasma-Parameter-Extraction for Minimizing Contamination and Damage in RIE Processes" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 7, pp. 839-843, July 1992, doi: .
Abstract: The two most important parameters in reactive ion etching process, ion bombardment energy and flux, were extracted through a simple RF waveform measurement at the excitation electrode in a conventional cathode-coupled plasma RIE system. By using the extracted plasma parameters, damage and contamination in Si substrates induced by reactive ion etching in a SiCl4 plasma were investigated. A very convenient map representation of ion energy and ion flux was introduced in understanding the etching process occurring in the RIE system.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_839/_p
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@ARTICLE{e75-c_7_839,
author={Takeo YAMASHITA, Satoshi HASAKA, Iwao NATORI, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Plasma-Parameter-Extraction for Minimizing Contamination and Damage in RIE Processes},
year={1992},
volume={E75-C},
number={7},
pages={839-843},
abstract={The two most important parameters in reactive ion etching process, ion bombardment energy and flux, were extracted through a simple RF waveform measurement at the excitation electrode in a conventional cathode-coupled plasma RIE system. By using the extracted plasma parameters, damage and contamination in Si substrates induced by reactive ion etching in a SiCl4 plasma were investigated. A very convenient map representation of ion energy and ion flux was introduced in understanding the etching process occurring in the RIE system.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Plasma-Parameter-Extraction for Minimizing Contamination and Damage in RIE Processes
T2 - IEICE TRANSACTIONS on Electronics
SP - 839
EP - 843
AU - Takeo YAMASHITA
AU - Satoshi HASAKA
AU - Iwao NATORI
AU - Tadahiro OHMI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - The two most important parameters in reactive ion etching process, ion bombardment energy and flux, were extracted through a simple RF waveform measurement at the excitation electrode in a conventional cathode-coupled plasma RIE system. By using the extracted plasma parameters, damage and contamination in Si substrates induced by reactive ion etching in a SiCl4 plasma were investigated. A very convenient map representation of ion energy and ion flux was introduced in understanding the etching process occurring in the RIE system.
ER -
English
