This paper proposes a novel differential active self-interference canceller (DASIC) algorithm for asynchronous in-band full-duplex (IBFD) Gaussian filtered frequency shift keying (GFSK), which is designed for wireless Internet of Things (IoT). In IBFD communications, where two terminals simultaneously transmit and receive signals in the same frequency band, there is an extremely strong self-interference (SI). The SI can be mitigated by an active SI canceller (ASIC), which subtracts an interference replica based on channel state information (CSI) from the received signal. The challenging problem is the realization of asynchronous IBFD for wireless IoT in indoor environments. In the asynchronous mode, pilot contamination is induced by the non-orthogonality between asynchronous pilot sequences. In addition, the transceiver suffers from analog front-end (AFE) impairments, such as phase noise. Due to these impairments, the SI cannot be canceled entirely at the receiver, resulting in residual interference. To address the above issue, the DASIC incorporates the principle of the differential codec, which enables to suppress SI without the CSI estimation of SI owing to the differential structure. Also, on the premise of using an error correction technique, iterative detection and decoding (IDD) is applied to improve the detection capability while exchanging the extrinsic log-likelihood ratio (LLR) between the maximum a-posteriori probability (MAP) detector and the channel decoder. Finally, the validity of using the DASIC algorithm is evaluated by computer simulations in terms of the packet error rate (PER). The results clearly demonstrate the possibility of realizing asynchronous IBFD.

This letter expands the previously proposed High Time Resolution Carrier Interferometry (HTRCI) to estimate a larger amount of channel status information (CSI). HTRCI is based on a comb-type pilot symbol on OFDM and CSI for null subcarriers are interpolated by time-domain signal processing. In order to utilize such null pilot subcarriers for increasing estimable CSI, they should generally be separated in frequency-domain prior to estimation and interpolation processes. The main proposal is its separation scheme in conjunction with the HTRCI treatment of the temporal domain. Its effectiveness is verified by a pilot de-contamination on downlink two-cell MIMO transmission scenario. Binary error rate (BER) performance can be improved in comparison to conventional HTRCI and zero padding (ZP) which replaces the impulse response alias with zeros.

This paper addresses pilot contamination in massive multiple-input multiple-output (MIMO) uplink. Pilot contamination is caused by reuse of identical pilot sequences in adjacent cells. To solve pilot contamination, the base station utilizes differences between the transmission frames of different users, which are detected via joint channel and data estimation. The joint estimation is regarded as a bilinear inference problem in compressed sensing. Expectation propagation (EP) is used to propose an iterative channel and data estimation algorithm. Initial channel estimates are attained via time-shifted pilots without exploiting information about large scale fading. The proposed EP modifies two points in conventional bilinear adaptive vector approximate message-passing (BAd-VAMP). One is that EP utilizes data estimates after soft decision in the channel estimation while BAd-VAMP uses them before soft decision. The other point is that EP can utilize the prior distribution of the channel matrix while BAd-VAMP cannot in principle. Numerical simulations show that EP converges much faster than BAd-VAMP in spatially correlated MIMO, in which approximate message-passing fails to converge toward the same fixed-point as EP and BAd-VAMP.

This paper expands our previously proposed semi-blind uplink interference suppression scheme for multicell multiuser massive MIMO systems to support multi modulus signals. The original proposal applies the channel state information (CSI) aided blind adaptive array (BAA) interference suppression after the beamspace preprocessing and the decision feedback channel estimation (DFCE). BAA is based on the constant modulus algorithm (CMA) which can fully exploit the degree of freedom (DoF) of massive antenna arrays to suppress both inter-user interference (IUI) and inter-cell interference (ICI). Its effectiveness has been verified under the extensive pilot contamination constraint. Unfortunately, CMA basically works well only for constant envelope signals such as QPSK and thus the proposed scheme should be expanded to cover QAM signals for more general use. This paper proposes to apply the multi modulus algorithm (MMA) and the minimum mean square error weight derivation based on data-aided sample matrix inversion (MMSE-SMI). It can successfully realize interference suppression even with the use of multi-level envelope signals such as 16QAM with satisfactorily outage probability performance below the fifth percentile.

Pilot contamination is addressed in massive multiple-input multiple-output (MIMO) uplink. The main ideas of pilot decontamination are twofold: One is to design transmission timing of pilot sequences such that the pilot transmission periods in different cells do not fully overlap with each other, as considered in previous works. The other is joint channel and data estimation via approximate message-passing (AMP) for bilinear inference. The convergence property of conventional AMP is bad in bilinear inference problems, so that adaptive damping was required to help conventional AMP converge. The main contribution of this paper is a modification of the update rules in conventional AMP to improve the convergence property of AMP. Numerical simulations show that the proposed AMP outperforms conventional AMP in terms of estimation performance when adaptive damping is not used. Furthermore, it achieves better performance than state-of-the-art methods based on subspace estimation when the power difference between cells is small.

This paper improves our previously proposed semi-blind uplink interference suppression scheme for multicell multiuser massive MIMO systems by incorporating the beamspace approach. The constant modulus algorithm (CMA), a known blind adaptive array scheme, can fully exploit the degree of freedom (DoF) offered by massive antenna arrays to suppress inter-user interference (IUI) and inter-cell interference (ICI). Unfortunately, CMA wastes a lot of the benefit of DoF for null-steering even when the number of incoming signal is fewer than that of receiving antenna elements. Our new proposal introduces the beamspace method which degenerates the number of array input for CMA from element-space to beamspace. It can control DoF expended for subsequent interference suppression by CMA. Optimizing the array beamforming gain and null-steering ability, can further improve the output signal-to-interference and noise power ratio (SINR). Computer simulation confirmed that our new proposal reduced the required number of data symbols by 34.6%. In addition, the 5th percentile SINR was also improved by 14.3dB.

Pilot contamination due to pilot reuse in adjacent cells is a very serious problem in massive multi-input multiple-output (MIMO) systems. Therefore, proper pilot allocation is essential for improving system performance. In this paper, we formulate the pilot allocation optimization problem so as to maximize uplink sum rate of the system. To reduce the required complexity inherent in finding the optimum pilot allocation, we propose a low-complexity pilot allocation algorithm, where the formulated problem is decoupled into multiple subproblems; in each subproblem, the pilot allocation at a given cell is optimized while the pilot allocation in other cells id held fixed. This process is continued until the achievable sum rate converges. Through multiple iterations, the optimum pilot allocation is found. In addition, to improve users' fairness, we formulate fairness-aware pilot allocation as maximization problem of sum of user's logarithmic rate and solve the formulated problem using a similar algorithm. Simulation results show that the proposed algorithms match the good performance of the exhaustive search algorithm, meanwhile the users' fairness is improved.

In this paper, we study the spectral efficiency of the uplink multi-user large-scale distributed antenna systems (DAS) with imperfect channel state information. We propose the system model of multi-user DAS and illustrate the necessity of pilot reuse. Then, we derive the sum-rate of the system under pilot contamination. Furthermore, we investigate the asymptotical performance when the number of antennas goes to infinity. To reduce the pilot contamination, we present two novel pilot assignment algorithms to improve the spectral efficiency. Finally, we evaluate our proposed strategies through extensive simulations which show that compared with random pilot reuse, the min-max algorithm shows impressive performance with low complexity.

Large number of electronic connectors are widely used in various electronic and telecommunication systems. No matter whether it is optical telecommunications or mobile phone systems, connectors are important links for electronics. Unfortunately connector contacts are exposed in air, they are different from any other electronic components, the contacts are greatly influenced by the environment where they operate. In China, dust and corrosion products are the main contaminants to cause contact failure. Evidently the failed contacts seriously deteriorate the reliability of electronic and telecommunication systems. This paper summarizes the recent achievements obtained by our Lab on the effect of dust and corrosion products to the connector contact failure. Since dust contamination is a very complex problem which is not only popular in China, but also happened in many countries. Continuous studies will be very useful to improve the contact reliability of connectors, setting up new and effective testing methods and standards, building up experimental and computer simulation systems.

The effect of the silicone vapor on the reliability of the micro-motor was examined. Adsorbed silicone was decomposed to SiO2 by heating due to the discharge between brush and commutator surface. It was found that the operation time until the failure was extremely shortened by the formation of SiO2. The existence of the maximum operation time until the failure was found as depending on the number of revolution. For the higher revolution, many amounts of SiO2 accumulated by the decomposition of the silicone shorten the operation time. For lower revolution, as the torque of the motor reduces, the operation time also shortens. Therefore, the maximum operation time exists for optimum revolution.

Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.

The growth behavior of copper particle on crystalline and amorphous silicon surfaces has been investigated. The study reveals that the growth behavior of copper particle depends on the substrate condition. When samples are intentionally contaminated in ultrapure water, both crystalline and amorphous silicon surfaces show no difference in their contamination levels. However, copper particles were not observed on an amorphous silicon surface except dipping in dilute CuCl2 solution. The copper concentration on an amorphous silicon surface after dipping in a 0.5% HF solution is similar to the level after contaminating in ultrapure water. The copper contamination level on a crystalline silicon surface, except from CuCl2 solution, decreased two orders of magnitude as compared with ultrapure water. The copper impurity level on crystalline silicon surface was reduced by two orders by cleaning in a sulfuric acid-hydrogen peroxide mixture. The sulfuric acid-hydrogen peroxide mixture cleaning was not effective on an amorphous silicon surface. When native oxide pre-existed on an amorphous silicon surface before contamination, however, the sulfuric acid-hydrogen peroxide mixture cleaning was effective for removing copper impurity. Our results suggest that copper contamination on an amorphous silicon surface have the characteristics of bonding directly with silicon and/or existing in the native oxide, in contrast with the situation on crystalline silicon surface. After contamination with 1000 ppm copper in CuF2 solution, the etch rate of an amorphous silicon film in a 0.5% HF solution was approximately one order of magnitude faster than that of crystalline silicon. This is attributed to the difference in crystalline structure between crystalline silicon and amorphous silicon.

Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.

The effect of silicone vapour concentration on the contact failure was examined by using micro relays and motor brush-slip ring(commutator) contacts, [(CH3) 2SiO]4: D4 was used as a vapour source of silicone contamination. Because the influence of the vapour of the silicone on the contact surface can not be avoided at all times due to its gradual evaporation in the atmosphere. The contact failure caused by the silicone vapour was confirmed as formation of SiO2 on the contact surfaceby analysis of EPMA and XPS. A minimum limiting concentration level which does not affect contact reliability was found. This limiting level was 10 ppm(O.13mg/l). Validity of the limiting level was confirmed by the relationships among concentration, temperature, SiO2 film thickness and contact resistance. Furthermore, the effect of the degree of silicone polymerization on the limiting concentration was derived by an empirical formula. This silicone is found to have polymerization degree larger than D7: n=7. These results were confirmed by the contact failure data due to the silicone contamination.

Systems for removing particulates and gaseous contaminants using the UV/photoelectron method under atmospheric and low pressure conditions have been investigated and its availability has been demonstrated. From experimental results, more than 90 % of particulate contaminants are removed by this method under atomospheric and low pressure conditions. This method can be used to design superclean spaces for wafer stockers, and wafer delivering systems in the LSI fabrication process.

Wet cleaning in actual LSI process is difficult to remove contamination perfectly, because the cleaning condition must be moderate to maintain device characteristics and device texture and because wet cleaning is not so effective for the particles generated during processes such as etching, photo lithography and film formation. Particle reduction depends on particle characteristics, i.e. the sticking force and the chemical structure of the particles. Metallic contamination on wafers, depending on the kind of solutions and the metal concentration in cleaning solutions, degrades TDDB characteristics and recom-bination lifetime. Although the lifetime degradation by the metallic contamination is appreciable, it is much smaller than those caused by damage in etching and in ion implantation.

The dielectric breakdown strength of thermally grown silicon dioxide films was studied for MOS capacitors fabricated on silicon wafers that were intentionally contaminated with magnesium and zinc. Most of magnesium was detected in the oxide film after oxidation. Zinc, some of which evaporated from the surface of wafers, was detected only in the oxide film. The mechanism of the dielectric degradation is dominated by formation of metal silicates, such as Mg2SiO4 (Forsterite) and Zn2SiO4 (Wilemite). The formation of metal silicates has no influence on the generation lifetime of minority carriers, however, it provides the flat-band voltage shift less than 0.3 eV, and forces to increase the density of deep surface states with the zinc contamination.

Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.

The motion of particles in low-pressure chemical vapor deposition (LPCVD) (0.4 Torr) equipment has been investigated by a numerical simulation. The effects of wafer orientation, electrostatic forces, and thermophoresis were evaluated. Horizontal surface-down processing and vertical processing can reduce particulate contamination remarkably compared with horizontal surface-up processing. Static electricity control is essential. Weakly charged wafers (several V to several 10 V) can significantly increase submicron particle deposition. In the absence of electrical forces, thermophoresis prevents deposition of particles in the size range 0.03 µmDp0.6 µm, when the temperature difference between the wafer surface and the gas inlet temperature exceeds 100. Deposition of particles smaller than 0.03 µm still occurs by diffusion.

The two most important parameters in reactive ion etching process, ion bombardment energy and flux, were extracted through a simple RF waveform measurement at the excitation electrode in a conventional cathode-coupled plasma RIE system. By using the extracted plasma parameters, damage and contamination in Si substrates induced by reactive ion etching in a SiCl4 plasma were investigated. A very convenient map representation of ion energy and ion flux was introduced in understanding the etching process occurring in the RIE system.