Recent Progress in KrF Excimer Laser Lithography
Summary :
Reduction in the illumination wavelength for exposure leads to higher resolution while keeping the depth of focus. Thus, KrF excimer laser lithography has been positioned as the next generation lithography tool behind g/i-line optical lithography, and many studies have been investigated. In the early days, the excimer laser lithography had many inherent problems, such as inadequate reliability, difficult maintainability, high operating cost, and low resolution and sensitivity of resist materials. However, the performance of the excimer laser stepper has been improved and chemical amplification resists have been developed for the past decade. At present, KrF excimer lithography has reached the level of trial manufacturing of lower submicron ULSI devices beyond 64 Mbit DRAMs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.26-31
- Publication Date
- 1993/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Opto-Electronics and LSI)
- Category
- Opto-Electronics Technology for LSIs
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Makoto NAKASE, "Recent Progress in KrF Excimer Laser Lithography" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 1, pp. 26-31, January 1993, doi: .
Abstract: Reduction in the illumination wavelength for exposure leads to higher resolution while keeping the depth of focus. Thus, KrF excimer laser lithography has been positioned as the next generation lithography tool behind g/i-line optical lithography, and many studies have been investigated. In the early days, the excimer laser lithography had many inherent problems, such as inadequate reliability, difficult maintainability, high operating cost, and low resolution and sensitivity of resist materials. However, the performance of the excimer laser stepper has been improved and chemical amplification resists have been developed for the past decade. At present, KrF excimer lithography has reached the level of trial manufacturing of lower submicron ULSI devices beyond 64 Mbit DRAMs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_1_26/_p
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@ARTICLE{e76-c_1_26,
author={Makoto NAKASE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Recent Progress in KrF Excimer Laser Lithography},
year={1993},
volume={E76-C},
number={1},
pages={26-31},
abstract={Reduction in the illumination wavelength for exposure leads to higher resolution while keeping the depth of focus. Thus, KrF excimer laser lithography has been positioned as the next generation lithography tool behind g/i-line optical lithography, and many studies have been investigated. In the early days, the excimer laser lithography had many inherent problems, such as inadequate reliability, difficult maintainability, high operating cost, and low resolution and sensitivity of resist materials. However, the performance of the excimer laser stepper has been improved and chemical amplification resists have been developed for the past decade. At present, KrF excimer lithography has reached the level of trial manufacturing of lower submicron ULSI devices beyond 64 Mbit DRAMs.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Recent Progress in KrF Excimer Laser Lithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 26
EP - 31
AU - Makoto NAKASE
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - Reduction in the illumination wavelength for exposure leads to higher resolution while keeping the depth of focus. Thus, KrF excimer laser lithography has been positioned as the next generation lithography tool behind g/i-line optical lithography, and many studies have been investigated. In the early days, the excimer laser lithography had many inherent problems, such as inadequate reliability, difficult maintainability, high operating cost, and low resolution and sensitivity of resist materials. However, the performance of the excimer laser stepper has been improved and chemical amplification resists have been developed for the past decade. At present, KrF excimer lithography has reached the level of trial manufacturing of lower submicron ULSI devices beyond 64 Mbit DRAMs.
ER -
English
