Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs

Toshiaki TSUCHIYA; Mitsuru HARADA; Kimiyoshi DEGUCHI; Tadahito MATSUDA

Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs

Toshiaki TSUCHIYA, Mitsuru HARADA, Kimiyoshi DEGUCHI, Tadahito MATSUDA

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Hot carrier reliability due to residual damage in the gate oxide created by synchrotron X-ray irradiation is investigated for subquarter-micrometer NMOSFETs under a wide irradiation-dose range (103,000 mJ/cm²). Although irradiation-induced interface-traps and positive charges are completely eliminated after 400 post-metalization-annealing, neutral electron traps partially remain. The effects of the residual trapa on hot-carrier degradation can be negligible when gate oxides thinner than about 5 nm are used, and it is found that there is no effect of irradiation damage on interface-trap generation due to injected hot-carriers. It is concluded that the influence of synchrotron radiation X-ray lithography on hot-carrier-induced degradation in subquarter-micrometer NMOSFETs can be negligible.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.506-510

Publication Date: 1993/04/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)

Category: Device Technology

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Toshiaki TSUCHIYA, Mitsuru HARADA, Kimiyoshi DEGUCHI, Tadahito MATSUDA, "Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 4, pp. 506-510, April 1993, doi: .
Abstract: Hot carrier reliability due to residual damage in the gate oxide created by synchrotron X-ray irradiation is investigated for subquarter-micrometer NMOSFETs under a wide irradiation-dose range (103,000 mJ/cm²). Although irradiation-induced interface-traps and positive charges are completely eliminated after 400 post-metalization-annealing, neutral electron traps partially remain. The effects of the residual trapa on hot-carrier degradation can be negligible when gate oxides thinner than about 5 nm are used, and it is found that there is no effect of irradiation damage on interface-trap generation due to injected hot-carriers. It is concluded that the influence of synchrotron radiation X-ray lithography on hot-carrier-induced degradation in subquarter-micrometer NMOSFETs can be negligible.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_506/_p

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@ARTICLE{e76-c_4_506,
author={Toshiaki TSUCHIYA, Mitsuru HARADA, Kimiyoshi DEGUCHI, Tadahito MATSUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs},
year={1993},
volume={E76-C},
number={4},
pages={506-510},
abstract={Hot carrier reliability due to residual damage in the gate oxide created by synchrotron X-ray irradiation is investigated for subquarter-micrometer NMOSFETs under a wide irradiation-dose range (103,000 mJ/cm²). Although irradiation-induced interface-traps and positive charges are completely eliminated after 400 post-metalization-annealing, neutral electron traps partially remain. The effects of the residual trapa on hot-carrier degradation can be negligible when gate oxides thinner than about 5 nm are used, and it is found that there is no effect of irradiation damage on interface-trap generation due to injected hot-carriers. It is concluded that the influence of synchrotron radiation X-ray lithography on hot-carrier-induced degradation in subquarter-micrometer NMOSFETs can be negligible.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 506
EP - 510
AU - Toshiaki TSUCHIYA
AU - Mitsuru HARADA
AU - Kimiyoshi DEGUCHI
AU - Tadahito MATSUDA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - Hot carrier reliability due to residual damage in the gate oxide created by synchrotron X-ray irradiation is investigated for subquarter-micrometer NMOSFETs under a wide irradiation-dose range (103,000 mJ/cm²). Although irradiation-induced interface-traps and positive charges are completely eliminated after 400 post-metalization-annealing, neutral electron traps partially remain. The effects of the residual trapa on hot-carrier degradation can be negligible when gate oxides thinner than about 5 nm are used, and it is found that there is no effect of irradiation damage on interface-trap generation due to injected hot-carriers. It is concluded that the influence of synchrotron radiation X-ray lithography on hot-carrier-induced degradation in subquarter-micrometer NMOSFETs can be negligible.
ER -