High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology

Hirokazu FUJIMAKI; Kenichi SUZUKI; Yoshio UMEMURA; Koji AKAHANE

High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology

Hirokazu FUJIMAKI, Kenichi SUZUKI, Yoshio UMEMURA, Koji AKAHANE

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Selective epitaxial growth technology has been extended to the base formation of a transistor on the basis of the SATURN (Self-Alignment Technology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, coupled with SIC (Selective Ion-implanted Collector) fabricated by lowenergy ion implantation, has not only narrowed the transistor active regions but has drastically reduced the base width. A final base width of 800 and a maximum cut-off frequency of 31 GHz were achieved.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.577-581

Publication Date: 1993/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)

Category: Device Technology

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Hirokazu FUJIMAKI, Kenichi SUZUKI, Yoshio UMEMURA, Koji AKAHANE, "High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 4, pp. 577-581, April 1993, doi: .
Abstract: Selective epitaxial growth technology has been extended to the base formation of a transistor on the basis of the SATURN (Self-Alignment Technology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, coupled with SIC (Selective Ion-implanted Collector) fabricated by lowenergy ion implantation, has not only narrowed the transistor active regions but has drastically reduced the base width. A final base width of 800 and a maximum cut-off frequency of 31 GHz were achieved.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_577/_p

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@ARTICLE{e76-c_4_577,
author={Hirokazu FUJIMAKI, Kenichi SUZUKI, Yoshio UMEMURA, Koji AKAHANE, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology},
year={1993},
volume={E76-C},
number={4},
pages={577-581},
abstract={Selective epitaxial growth technology has been extended to the base formation of a transistor on the basis of the SATURN (Self-Alignment Technology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, coupled with SIC (Selective Ion-implanted Collector) fabricated by lowenergy ion implantation, has not only narrowed the transistor active regions but has drastically reduced the base width. A final base width of 800 and a maximum cut-off frequency of 31 GHz were achieved.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 577
EP - 581
AU - Hirokazu FUJIMAKI
AU - Kenichi SUZUKI
AU - Yoshio UMEMURA
AU - Koji AKAHANE
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - Selective epitaxial growth technology has been extended to the base formation of a transistor on the basis of the SATURN (Self-Alignment Technology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, coupled with SIC (Selective Ion-implanted Collector) fabricated by lowenergy ion implantation, has not only narrowed the transistor active regions but has drastically reduced the base width. A final base width of 800 and a maximum cut-off frequency of 31 GHz were achieved.
ER -