Copper Adsorption Behavior on Silicon Substrates
Summary :
Copper contamination behavior is studied, depending on the pH level, conductivity type P or N of a silicon substrate, and contamination method of copper. If the pH level of a copper containing solution is adjusted by using ammonia, copper atoms and ammonia molecules produce copper ion complexes. Accordingly, the amount of copper adsorption on the substrate surface is decreased. When N-type silicon substrates are contaminated by means of copper containing solutions, copper atoms on the surfaces diffuse into bulk crystal even at room temperature. But for P-type silicon substrates, copper atoms are transferred into bulk crystal only after high temperature annealing. In the case of silicon substrates contaminated by contact with metallic copper, no copper atom diffusion into bulk crystal was observed. The above mentioned copper contamination behavior can be explained by the charge transfer interaction of copper atoms with silicon substrates.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.635-640
- Publication Date
- 1993/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Category
- Process Technology
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Keyword
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Yoshimi SHIRAMIZU, Makoto MORITA, Akihiko ISHITANI, "Copper Adsorption Behavior on Silicon Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 4, pp. 635-640, April 1993, doi: .
Abstract: Copper contamination behavior is studied, depending on the pH level, conductivity type P or N of a silicon substrate, and contamination method of copper. If the pH level of a copper containing solution is adjusted by using ammonia, copper atoms and ammonia molecules produce copper ion complexes. Accordingly, the amount of copper adsorption on the substrate surface is decreased. When N-type silicon substrates are contaminated by means of copper containing solutions, copper atoms on the surfaces diffuse into bulk crystal even at room temperature. But for P-type silicon substrates, copper atoms are transferred into bulk crystal only after high temperature annealing. In the case of silicon substrates contaminated by contact with metallic copper, no copper atom diffusion into bulk crystal was observed. The above mentioned copper contamination behavior can be explained by the charge transfer interaction of copper atoms with silicon substrates.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_635/_p
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@ARTICLE{e76-c_4_635,
author={Yoshimi SHIRAMIZU, Makoto MORITA, Akihiko ISHITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Copper Adsorption Behavior on Silicon Substrates},
year={1993},
volume={E76-C},
number={4},
pages={635-640},
abstract={Copper contamination behavior is studied, depending on the pH level, conductivity type P or N of a silicon substrate, and contamination method of copper. If the pH level of a copper containing solution is adjusted by using ammonia, copper atoms and ammonia molecules produce copper ion complexes. Accordingly, the amount of copper adsorption on the substrate surface is decreased. When N-type silicon substrates are contaminated by means of copper containing solutions, copper atoms on the surfaces diffuse into bulk crystal even at room temperature. But for P-type silicon substrates, copper atoms are transferred into bulk crystal only after high temperature annealing. In the case of silicon substrates contaminated by contact with metallic copper, no copper atom diffusion into bulk crystal was observed. The above mentioned copper contamination behavior can be explained by the charge transfer interaction of copper atoms with silicon substrates.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Copper Adsorption Behavior on Silicon Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 635
EP - 640
AU - Yoshimi SHIRAMIZU
AU - Makoto MORITA
AU - Akihiko ISHITANI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - Copper contamination behavior is studied, depending on the pH level, conductivity type P or N of a silicon substrate, and contamination method of copper. If the pH level of a copper containing solution is adjusted by using ammonia, copper atoms and ammonia molecules produce copper ion complexes. Accordingly, the amount of copper adsorption on the substrate surface is decreased. When N-type silicon substrates are contaminated by means of copper containing solutions, copper atoms on the surfaces diffuse into bulk crystal even at room temperature. But for P-type silicon substrates, copper atoms are transferred into bulk crystal only after high temperature annealing. In the case of silicon substrates contaminated by contact with metallic copper, no copper atom diffusion into bulk crystal was observed. The above mentioned copper contamination behavior can be explained by the charge transfer interaction of copper atoms with silicon substrates.
ER -
English
