A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.

Copper contamination behavior is studied, depending on the pH level, conductivity type P or N of a silicon substrate, and contamination method of copper. If the pH level of a copper containing solution is adjusted by using ammonia, copper atoms and ammonia molecules produce copper ion complexes. Accordingly, the amount of copper adsorption on the substrate surface is decreased. When N-type silicon substrates are contaminated by means of copper containing solutions, copper atoms on the surfaces diffuse into bulk crystal even at room temperature. But for P-type silicon substrates, copper atoms are transferred into bulk crystal only after high temperature annealing. In the case of silicon substrates contaminated by contact with metallic copper, no copper atom diffusion into bulk crystal was observed. The above mentioned copper contamination behavior can be explained by the charge transfer interaction of copper atoms with silicon substrates.