IEICE TRANSACTIONS on Electronics
A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS
Summary :
A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.9 pp.1721-1728
- Publication Date
- 2007/09/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.9.1721
- Type of Manuscript
- Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
- Category
- Active Devices/Circuits
Authors
Keyword
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Minoru NAGATA, Hideaki MASUOKA, Shin-ichi FUKASE, Makoto KIKUTA, Makoto MORITA, Nobuyuki ITOH, "A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 9, pp. 1721-1728, September 2007, doi: 10.1093/ietele/e90-c.9.1721.
Abstract: A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.9.1721/_p
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@ARTICLE{e90-c_9_1721,
author={Minoru NAGATA, Hideaki MASUOKA, Shin-ichi FUKASE, Makoto KIKUTA, Makoto MORITA, Nobuyuki ITOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS},
year={2007},
volume={E90-C},
number={9},
pages={1721-1728},
abstract={A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.},
keywords={},
doi={10.1093/ietele/e90-c.9.1721},
ISSN={1745-1353},
month={September},}
Copy
TY - JOUR
TI - A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 1721
EP - 1728
AU - Minoru NAGATA
AU - Hideaki MASUOKA
AU - Shin-ichi FUKASE
AU - Makoto KIKUTA
AU - Makoto MORITA
AU - Nobuyuki ITOH
PY - 2007
DO - 10.1093/ietele/e90-c.9.1721
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2007
AB - A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.
ER -
English
