A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.

Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was -111.2 dBm, the output power of TX was +3 dBm, and the phase noise of integrated VCO was -77 dBc/Hz at 3 kHz offset away from carrier. The current consumption at fully duplex operation was 76 mA at 3.6 V power supply. The chip was realized by 0.8 µm standard silicon BiCMOS process.