IEICE TRANSACTIONS on Fundamentals
High Sensitivity 900-MHz ISM Band Transceiver
Summary :
Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was -111.2 dBm, the output power of TX was +3 dBm, and the phase noise of integrated VCO was -77 dBc/Hz at 3 kHz offset away from carrier. The current consumption at fully duplex operation was 76 mA at 3.6 V power supply. The chip was realized by 0.8 µm standard silicon BiCMOS process.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E88-A No.2 pp.498-506
- Publication Date
- 2005/02/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietfec/e88-a.2.498
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
- Category
Authors
Nobuyuki ITOH
Ken-ichi HIRASHIKI
Tadashi TERADA
Makoto KIKUTA
Shin-ichiro ISHIZUKA
Tsuyoshi KOTO
Tsuneo SUZUKI
Hidehiko AOKI
Keyword
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Nobuyuki ITOH, Ken-ichi HIRASHIKI, Tadashi TERADA, Makoto KIKUTA, Shin-ichiro ISHIZUKA, Tsuyoshi KOTO, Tsuneo SUZUKI, Hidehiko AOKI, "High Sensitivity 900-MHz ISM Band Transceiver" in IEICE TRANSACTIONS on Fundamentals,
vol. E88-A, no. 2, pp. 498-506, February 2005, doi: 10.1093/ietfec/e88-a.2.498.
Abstract: Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was -111.2 dBm, the output power of TX was +3 dBm, and the phase noise of integrated VCO was -77 dBc/Hz at 3 kHz offset away from carrier. The current consumption at fully duplex operation was 76 mA at 3.6 V power supply. The chip was realized by 0.8 µm standard silicon BiCMOS process.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1093/ietfec/e88-a.2.498/_p
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@ARTICLE{e88-a_2_498,
author={Nobuyuki ITOH, Ken-ichi HIRASHIKI, Tadashi TERADA, Makoto KIKUTA, Shin-ichiro ISHIZUKA, Tsuyoshi KOTO, Tsuneo SUZUKI, Hidehiko AOKI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={High Sensitivity 900-MHz ISM Band Transceiver},
year={2005},
volume={E88-A},
number={2},
pages={498-506},
abstract={Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was -111.2 dBm, the output power of TX was +3 dBm, and the phase noise of integrated VCO was -77 dBc/Hz at 3 kHz offset away from carrier. The current consumption at fully duplex operation was 76 mA at 3.6 V power supply. The chip was realized by 0.8 µm standard silicon BiCMOS process.},
keywords={},
doi={10.1093/ietfec/e88-a.2.498},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - High Sensitivity 900-MHz ISM Band Transceiver
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 498
EP - 506
AU - Nobuyuki ITOH
AU - Ken-ichi HIRASHIKI
AU - Tadashi TERADA
AU - Makoto KIKUTA
AU - Shin-ichiro ISHIZUKA
AU - Tsuyoshi KOTO
AU - Tsuneo SUZUKI
AU - Hidehiko AOKI
PY - 2005
DO - 10.1093/ietfec/e88-a.2.498
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E88-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2005
AB - Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was -111.2 dBm, the output power of TX was +3 dBm, and the phase noise of integrated VCO was -77 dBc/Hz at 3 kHz offset away from carrier. The current consumption at fully duplex operation was 76 mA at 3.6 V power supply. The chip was realized by 0.8 µm standard silicon BiCMOS process.
ER -
English
