Though millimeter wave applications have attracted much attention in recent years, they have not yet been put to practical use. The major reason for the failure may be a large transmission loss peculiar to the short wavelength. In order to overcome the inconvenience, it may be promising to introduce the technology of millimeter-wave NRD-guide circuits. In this technology, not only NRD-guide but also Gunn diodes and Schottky diodes play the important role in high bit-rate millimeter-wave applications. A variety of practical millimeter wave wireless systems have been proposed and fabricated. Performances and applications of them are discussed in detail as well.

A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.