IEICE TRANSACTIONS on Electronics
Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method
Summary :
A new method for the DRAM soft-error evaluation was developed. By using a focused proton microprobe as a radiation source, and scanning it on a memory cell plane, local sensitive structure of memory cells against soft-errors could be investigated with a form of the susceptibility mapping. Cell mode and bit-line mode soft-errors could be clearly distinguished by controlling the incident location and the proton dose, and it was also found that the incident beam within 4 µm around the monitored memory cell caused the soft-error. The retrograde well formed by the MeV ion implantation technology was examined by this method. It was confirmed that the B+ layers in the retrograde well were a sufficient barrier against the charge collection. The generation rate of the electron-hole pairs and the charge collection into n+ layers with a retrograde well and a conventional well were estimated by the device simulator, and were explained the experimental results.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.399-405
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Device Technology
Authors
Yoshikazu OHNO
Hiroshi KIMURA
Ken-ichiro SONODA
Tadashi NISHIMURA
Shin-ichi SATOH
Hirokazu SAYAMA
Shigenori HARA
Mikio TAKAI
Hirokazu MIYOSHI
Keyword
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Yoshikazu OHNO, Hiroshi KIMURA, Ken-ichiro SONODA, Tadashi NISHIMURA, Shin-ichi SATOH, Hirokazu SAYAMA, Shigenori HARA, Mikio TAKAI, Hirokazu MIYOSHI, "Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 399-405, March 1994, doi: .
Abstract: A new method for the DRAM soft-error evaluation was developed. By using a focused proton microprobe as a radiation source, and scanning it on a memory cell plane, local sensitive structure of memory cells against soft-errors could be investigated with a form of the susceptibility mapping. Cell mode and bit-line mode soft-errors could be clearly distinguished by controlling the incident location and the proton dose, and it was also found that the incident beam within 4 µm around the monitored memory cell caused the soft-error. The retrograde well formed by the MeV ion implantation technology was examined by this method. It was confirmed that the B+ layers in the retrograde well were a sufficient barrier against the charge collection. The generation rate of the electron-hole pairs and the charge collection into n+ layers with a retrograde well and a conventional well were estimated by the device simulator, and were explained the experimental results.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_399/_p
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@ARTICLE{e77-c_3_399,
author={Yoshikazu OHNO, Hiroshi KIMURA, Ken-ichiro SONODA, Tadashi NISHIMURA, Shin-ichi SATOH, Hirokazu SAYAMA, Shigenori HARA, Mikio TAKAI, Hirokazu MIYOSHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method},
year={1994},
volume={E77-C},
number={3},
pages={399-405},
abstract={A new method for the DRAM soft-error evaluation was developed. By using a focused proton microprobe as a radiation source, and scanning it on a memory cell plane, local sensitive structure of memory cells against soft-errors could be investigated with a form of the susceptibility mapping. Cell mode and bit-line mode soft-errors could be clearly distinguished by controlling the incident location and the proton dose, and it was also found that the incident beam within 4 µm around the monitored memory cell caused the soft-error. The retrograde well formed by the MeV ion implantation technology was examined by this method. It was confirmed that the B+ layers in the retrograde well were a sufficient barrier against the charge collection. The generation rate of the electron-hole pairs and the charge collection into n+ layers with a retrograde well and a conventional well were estimated by the device simulator, and were explained the experimental results.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 399
EP - 405
AU - Yoshikazu OHNO
AU - Hiroshi KIMURA
AU - Ken-ichiro SONODA
AU - Tadashi NISHIMURA
AU - Shin-ichi SATOH
AU - Hirokazu SAYAMA
AU - Shigenori HARA
AU - Mikio TAKAI
AU - Hirokazu MIYOSHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - A new method for the DRAM soft-error evaluation was developed. By using a focused proton microprobe as a radiation source, and scanning it on a memory cell plane, local sensitive structure of memory cells against soft-errors could be investigated with a form of the susceptibility mapping. Cell mode and bit-line mode soft-errors could be clearly distinguished by controlling the incident location and the proton dose, and it was also found that the incident beam within 4 µm around the monitored memory cell caused the soft-error. The retrograde well formed by the MeV ion implantation technology was examined by this method. It was confirmed that the B+ layers in the retrograde well were a sufficient barrier against the charge collection. The generation rate of the electron-hole pairs and the charge collection into n+ layers with a retrograde well and a conventional well were estimated by the device simulator, and were explained the experimental results.
ER -
English
