IEICE TRANSACTIONS on Electronics
Optical Beam Induced Current Technique as a Failure Analysis Tool of EPROMs
Summary :
The mechanism for data retention failure of EPROM has been investigated by the Optical Beam Induced Current(OBIC) technique. It was found that the data of failure cells were changed from '1' to '0' during read-mode by laser irradiation by OBIC. The data in good cells was not changed. This result suggests the effective barrier height between Si and SiO2 is being lowered. In addition, the cross section technique revealed that gate electrode and gate oxide were exposed due to lack of dielectric layers. This defect seemed to be the cause of the barrier height lowering. The OBIC technique not only gives the failure location but a detailed information of the failure mechanism. We found that OBIC technique is a very powerful tool for the analysis of EPROM failure mechanisms. The usefulness of the Emission Micro Scope (EMS) technique is also discussed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.4 pp.574-578
- Publication Date
- 1994/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on LSI Failure Analysis)
- Category
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Jun SATOH, Hiroshi NAMBA, Tadashi KIKUCHI, Kenichi YAMADA, Hidetoshi YOSHIOKA, Miki TANAKA, Ken SHONO, "Optical Beam Induced Current Technique as a Failure Analysis Tool of EPROMs" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 4, pp. 574-578, April 1994, doi: .
Abstract: The mechanism for data retention failure of EPROM has been investigated by the Optical Beam Induced Current(OBIC) technique. It was found that the data of failure cells were changed from '1' to '0' during read-mode by laser irradiation by OBIC. The data in good cells was not changed. This result suggests the effective barrier height between Si and SiO2 is being lowered. In addition, the cross section technique revealed that gate electrode and gate oxide were exposed due to lack of dielectric layers. This defect seemed to be the cause of the barrier height lowering. The OBIC technique not only gives the failure location but a detailed information of the failure mechanism. We found that OBIC technique is a very powerful tool for the analysis of EPROM failure mechanisms. The usefulness of the Emission Micro Scope (EMS) technique is also discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_4_574/_p
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@ARTICLE{e77-c_4_574,
author={Jun SATOH, Hiroshi NAMBA, Tadashi KIKUCHI, Kenichi YAMADA, Hidetoshi YOSHIOKA, Miki TANAKA, Ken SHONO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Optical Beam Induced Current Technique as a Failure Analysis Tool of EPROMs},
year={1994},
volume={E77-C},
number={4},
pages={574-578},
abstract={The mechanism for data retention failure of EPROM has been investigated by the Optical Beam Induced Current(OBIC) technique. It was found that the data of failure cells were changed from '1' to '0' during read-mode by laser irradiation by OBIC. The data in good cells was not changed. This result suggests the effective barrier height between Si and SiO2 is being lowered. In addition, the cross section technique revealed that gate electrode and gate oxide were exposed due to lack of dielectric layers. This defect seemed to be the cause of the barrier height lowering. The OBIC technique not only gives the failure location but a detailed information of the failure mechanism. We found that OBIC technique is a very powerful tool for the analysis of EPROM failure mechanisms. The usefulness of the Emission Micro Scope (EMS) technique is also discussed.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Optical Beam Induced Current Technique as a Failure Analysis Tool of EPROMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 574
EP - 578
AU - Jun SATOH
AU - Hiroshi NAMBA
AU - Tadashi KIKUCHI
AU - Kenichi YAMADA
AU - Hidetoshi YOSHIOKA
AU - Miki TANAKA
AU - Ken SHONO
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1994
AB - The mechanism for data retention failure of EPROM has been investigated by the Optical Beam Induced Current(OBIC) technique. It was found that the data of failure cells were changed from '1' to '0' during read-mode by laser irradiation by OBIC. The data in good cells was not changed. This result suggests the effective barrier height between Si and SiO2 is being lowered. In addition, the cross section technique revealed that gate electrode and gate oxide were exposed due to lack of dielectric layers. This defect seemed to be the cause of the barrier height lowering. The OBIC technique not only gives the failure location but a detailed information of the failure mechanism. We found that OBIC technique is a very powerful tool for the analysis of EPROM failure mechanisms. The usefulness of the Emission Micro Scope (EMS) technique is also discussed.
ER -
English
