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IEICE TRANSACTIONS on Electronics

16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate

Yunho CHOI, Myungho KIM, Hyunsoon JANG, Taejin KIM, Seung-hoon LEE, Ho-cheol LEE,Churoo PARK, Siyeol LEE, Cheol-soo KIM, Sooin CHO, Ejaz HAQ, Joel KARP, Daeje CHIN

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Summary :

In order to keep up with the growing need for memory bandwidth at low cost, a new synchronous DRAM (SDRAM) architecture is proposed. The SDRAM has programmable latency, burst length, and burst type for wide variety of applications. The experimental 16M SDRAM (2M8) achieves a 125-Mbyte/s data rate using 0.5-µm twin well CMOS technology.

Publication
IEICE TRANSACTIONS on Electronics Vol.E77-C No.5 pp.859-863
Publication Date
1994/05/25
Publicized
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DOI
Type of Manuscript
Special Section LETTER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
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