IEICE TRANSACTIONS on Electronics
A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
Summary :
A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E78-C No.4 pp.424-429
- Publication Date
- 1995/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
- Category
- Analog Circuits
Authors
Masami NAGAOKA
Tomotoshi INOUE
Katsue KAWAKYU
Shuichi OBAYASHI
Hiroyuki KAYANO
Eiji TAKAGI
Yoshikazu TANABE
Misao YOSHIMURA
Kenji ISHIDA
Yoshiaki KITAURA
Naotaka UCHITOMI
Keyword
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Masami NAGAOKA, Tomotoshi INOUE, Katsue KAWAKYU, Shuichi OBAYASHI, Hiroyuki KAYANO, Eiji TAKAGI, Yoshikazu TANABE, Misao YOSHIMURA, Kenji ISHIDA, Yoshiaki KITAURA, Naotaka UCHITOMI, "A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 4, pp. 424-429, April 1995, doi: .
Abstract: A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_4_424/_p
Copy
@ARTICLE{e78-c_4_424,
author={Masami NAGAOKA, Tomotoshi INOUE, Katsue KAWAKYU, Shuichi OBAYASHI, Hiroyuki KAYANO, Eiji TAKAGI, Yoshikazu TANABE, Misao YOSHIMURA, Kenji ISHIDA, Yoshiaki KITAURA, Naotaka UCHITOMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications},
year={1995},
volume={E78-C},
number={4},
pages={424-429},
abstract={A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 424
EP - 429
AU - Masami NAGAOKA
AU - Tomotoshi INOUE
AU - Katsue KAWAKYU
AU - Shuichi OBAYASHI
AU - Hiroyuki KAYANO
AU - Eiji TAKAGI
AU - Yoshikazu TANABE
AU - Misao YOSHIMURA
AU - Kenji ISHIDA
AU - Yoshiaki KITAURA
AU - Naotaka UCHITOMI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1995
AB - A monolithic linear power amplifier IC operating with a single low 2.7-V supply has been developed for 1.9-GHz digital mobile communication systems, such as the Japanese personal handy phone system (PHS). Refractory WNx/W self-aligned gate GaAs power MESFETs have been successfully developed for L-band power amplification, and this power amplifier operates with high efficiency and low distortion at a low voltage of 2.7 V, without any additional negative voltage supply, by virtue of small drain knee voltage, high transconductance and sufficient breakdown voltage of the power MESFET. An output power of 23.0 dBm and a high power-added efficiency of 30.8% were attained for 1.9-GHz π/4-shifted QPSK (quadrature phase shift keying) modulated input when adjacent channel leakage power level was less than -60 dBc at 600 kHz apart from 1.9 GHz.
ER -
English
