A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Summary :
A 0.1-µm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E78-C No.9 pp.1189-1194
- Publication Date
- 1995/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Masami TOKUMITSU, Kazumi NISHIMURA, Makoto HIRANO, Kimiyoshi YAMASAKI, "A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 9, pp. 1189-1194, September 1995, doi: .
Abstract: A 0.1-µm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_9_1189/_p
Copy
@ARTICLE{e78-c_9_1189,
author={Masami TOKUMITSU, Kazumi NISHIMURA, Makoto HIRANO, Kimiyoshi YAMASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications},
year={1995},
volume={E78-C},
number={9},
pages={1189-1194},
abstract={A 0.1-µm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1189
EP - 1194
AU - Masami TOKUMITSU
AU - Kazumi NISHIMURA
AU - Makoto HIRANO
AU - Kimiyoshi YAMASAKI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1995
AB - A 0.1-µm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD) device structure.
ER -
English
