IEICE TRANSACTIONS on Electronics
Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation
Summary :
A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.3 pp.382-384
- Publication Date
- 1996/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue on Scientific ULSI Manufacturing Technology)
- Category
- High-Performance Processing
Authors
Keyword
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Keiichi UEDA, Kiyoshi SHIBATA, Kazunobu MAMENO, "Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 3, pp. 382-384, March 1996, doi: .
Abstract: A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_3_382/_p
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@ARTICLE{e79-c_3_382,
author={Keiichi UEDA, Kiyoshi SHIBATA, Kazunobu MAMENO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation},
year={1996},
volume={E79-C},
number={3},
pages={382-384},
abstract={A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Improvement of Etching Selectivity to Photoresist for Al Dry Etching by Using Ion Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 382
EP - 384
AU - Keiichi UEDA
AU - Kiyoshi SHIBATA
AU - Kazunobu MAMENO
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1996
AB - A novel method has been developed to improve the dry etching selectivity of aluminum alloy with respect to photoresist by implanting ions into the patterned photoresist. The selectivity becomes 7.5, which is 5 times higher than that of the unimplanted case. Accordingly, this technology is very promising for fabricating multi-level interconnections in sub-half micron LSIs.
ER -
English
