IEICE TRANSACTIONS on Electronics
Low-Power and High-Speed LSIs Using 0.25-µm CMOS/SIMOX
Summary :
Various high-performance SOI CMOS circuits were fabricated using fully-depleted 0.25-µm gate MOSFETs on a low-dose SIMOX substrate. 2.4-Gbps operations were achieved for I/O and speed conversion circuits which are key elements in a multimedia communication LSI. LVTTL-compatible gate array LSI was developed with an ESD protection circuit which is the first one to meer the MIL standard. A 120-kG test LSI was fabricated on the gate array, and the LSI performances using three kind of technologies; 0.25-µm bulk and SIMOX and 0.5-µm bulk; were compared. A 0.25-µm SIMOX LSI was 10% faster with 35% less power dissipation compared with a 0.25-µm bulk LSI. The 0.25-µm SIMOX LSI can operate at a VDD of 1.2 V to attain the same speed as the 0.5-µm bulk LSI operating at 3.3 V, and this results in 1/40 power reduction. For the high-speed communication use, an ATM-switch LSI with 220-kG and a 110-kb memory was fabricated. A high-performance of 2.5-Gbps interface speed and 312-Mbps internal speed were achieved using 0.25-µm CMOS/SIMOX. This ATM-switch LSI has the greatest bandwidth of 40-Gbps ever reported using a one-chip ATM-switch LSI.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.12 pp.1532-1538
- Publication Date
- 1997/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
- Category
Authors
Keyword
CMOS, SOI, SIMOX, gate array, ATM switch
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Masayuki INO, "Low-Power and High-Speed LSIs Using 0.25-µm CMOS/SIMOX" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 12, pp. 1532-1538, December 1997, doi: .
Abstract: Various high-performance SOI CMOS circuits were fabricated using fully-depleted 0.25-µm gate MOSFETs on a low-dose SIMOX substrate. 2.4-Gbps operations were achieved for I/O and speed conversion circuits which are key elements in a multimedia communication LSI. LVTTL-compatible gate array LSI was developed with an ESD protection circuit which is the first one to meer the MIL standard. A 120-kG test LSI was fabricated on the gate array, and the LSI performances using three kind of technologies; 0.25-µm bulk and SIMOX and 0.5-µm bulk; were compared. A 0.25-µm SIMOX LSI was 10% faster with 35% less power dissipation compared with a 0.25-µm bulk LSI. The 0.25-µm SIMOX LSI can operate at a VDD of 1.2 V to attain the same speed as the 0.5-µm bulk LSI operating at 3.3 V, and this results in 1/40 power reduction. For the high-speed communication use, an ATM-switch LSI with 220-kG and a 110-kb memory was fabricated. A high-performance of 2.5-Gbps interface speed and 312-Mbps internal speed were achieved using 0.25-µm CMOS/SIMOX. This ATM-switch LSI has the greatest bandwidth of 40-Gbps ever reported using a one-chip ATM-switch LSI.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_12_1532/_p
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@ARTICLE{e80-c_12_1532,
author={Masayuki INO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Power and High-Speed LSIs Using 0.25-µm CMOS/SIMOX},
year={1997},
volume={E80-C},
number={12},
pages={1532-1538},
abstract={Various high-performance SOI CMOS circuits were fabricated using fully-depleted 0.25-µm gate MOSFETs on a low-dose SIMOX substrate. 2.4-Gbps operations were achieved for I/O and speed conversion circuits which are key elements in a multimedia communication LSI. LVTTL-compatible gate array LSI was developed with an ESD protection circuit which is the first one to meer the MIL standard. A 120-kG test LSI was fabricated on the gate array, and the LSI performances using three kind of technologies; 0.25-µm bulk and SIMOX and 0.5-µm bulk; were compared. A 0.25-µm SIMOX LSI was 10% faster with 35% less power dissipation compared with a 0.25-µm bulk LSI. The 0.25-µm SIMOX LSI can operate at a VDD of 1.2 V to attain the same speed as the 0.5-µm bulk LSI operating at 3.3 V, and this results in 1/40 power reduction. For the high-speed communication use, an ATM-switch LSI with 220-kG and a 110-kb memory was fabricated. A high-performance of 2.5-Gbps interface speed and 312-Mbps internal speed were achieved using 0.25-µm CMOS/SIMOX. This ATM-switch LSI has the greatest bandwidth of 40-Gbps ever reported using a one-chip ATM-switch LSI.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Low-Power and High-Speed LSIs Using 0.25-µm CMOS/SIMOX
T2 - IEICE TRANSACTIONS on Electronics
SP - 1532
EP - 1538
AU - Masayuki INO
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1997
AB - Various high-performance SOI CMOS circuits were fabricated using fully-depleted 0.25-µm gate MOSFETs on a low-dose SIMOX substrate. 2.4-Gbps operations were achieved for I/O and speed conversion circuits which are key elements in a multimedia communication LSI. LVTTL-compatible gate array LSI was developed with an ESD protection circuit which is the first one to meer the MIL standard. A 120-kG test LSI was fabricated on the gate array, and the LSI performances using three kind of technologies; 0.25-µm bulk and SIMOX and 0.5-µm bulk; were compared. A 0.25-µm SIMOX LSI was 10% faster with 35% less power dissipation compared with a 0.25-µm bulk LSI. The 0.25-µm SIMOX LSI can operate at a VDD of 1.2 V to attain the same speed as the 0.5-µm bulk LSI operating at 3.3 V, and this results in 1/40 power reduction. For the high-speed communication use, an ATM-switch LSI with 220-kG and a 110-kb memory was fabricated. A high-performance of 2.5-Gbps interface speed and 312-Mbps internal speed were achieved using 0.25-µm CMOS/SIMOX. This ATM-switch LSI has the greatest bandwidth of 40-Gbps ever reported using a one-chip ATM-switch LSI.
ER -
English
