IEICE TRANSACTIONS on Electronics
A Low Dark Current CCD Linear Image Sensor
Summary :
A low dark current CCD linear image sensor with pixels consisting of a photodiode and a storage area has been developed. In order to suppress the dark current, the wafer process has been improved. An impurity profile of a photodiode was modified to minimize depletion width, which was monitored by the photodiode potential. Surface states under the storage gate were decreased by hydrogen annealing with plasma-deposited silicon nitride as an inter metal dielectric film. As the isolation dose decreased, the dark current both in the photodiode and in the storage region were effectively suppressed. Finally, low dark currents of 5 pA/cm2 at photodiode and 120 pA/cm2 at storage area were obtained.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.1 pp.154-159
- Publication Date
- 1997/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Category
- Semiconductor Materials and Devices
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Masao YAMAWAKI, Yuichi KUNORI, "A Low Dark Current CCD Linear Image Sensor" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 1, pp. 154-159, January 1997, doi: .
Abstract: A low dark current CCD linear image sensor with pixels consisting of a photodiode and a storage area has been developed. In order to suppress the dark current, the wafer process has been improved. An impurity profile of a photodiode was modified to minimize depletion width, which was monitored by the photodiode potential. Surface states under the storage gate were decreased by hydrogen annealing with plasma-deposited silicon nitride as an inter metal dielectric film. As the isolation dose decreased, the dark current both in the photodiode and in the storage region were effectively suppressed. Finally, low dark currents of 5 pA/cm2 at photodiode and 120 pA/cm2 at storage area were obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_1_154/_p
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@ARTICLE{e80-c_1_154,
author={Masao YAMAWAKI, Yuichi KUNORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Dark Current CCD Linear Image Sensor},
year={1997},
volume={E80-C},
number={1},
pages={154-159},
abstract={A low dark current CCD linear image sensor with pixels consisting of a photodiode and a storage area has been developed. In order to suppress the dark current, the wafer process has been improved. An impurity profile of a photodiode was modified to minimize depletion width, which was monitored by the photodiode potential. Surface states under the storage gate were decreased by hydrogen annealing with plasma-deposited silicon nitride as an inter metal dielectric film. As the isolation dose decreased, the dark current both in the photodiode and in the storage region were effectively suppressed. Finally, low dark currents of 5 pA/cm2 at photodiode and 120 pA/cm2 at storage area were obtained.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - A Low Dark Current CCD Linear Image Sensor
T2 - IEICE TRANSACTIONS on Electronics
SP - 154
EP - 159
AU - Masao YAMAWAKI
AU - Yuichi KUNORI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1997
AB - A low dark current CCD linear image sensor with pixels consisting of a photodiode and a storage area has been developed. In order to suppress the dark current, the wafer process has been improved. An impurity profile of a photodiode was modified to minimize depletion width, which was monitored by the photodiode potential. Surface states under the storage gate were decreased by hydrogen annealing with plasma-deposited silicon nitride as an inter metal dielectric film. As the isolation dose decreased, the dark current both in the photodiode and in the storage region were effectively suppressed. Finally, low dark currents of 5 pA/cm2 at photodiode and 120 pA/cm2 at storage area were obtained.
ER -
English
