High-Quality Low-Dose SIMOX Wafers
Summary :
This paper reviews the structure and electrical properties of high-quality Internal Thermal OXidation (ITOX)-processed low-dose Separation by IMplanted OXygen (SIMOX) wafers. The ITOX SIMOX process consists of three steps: low-dose oxygen implantation, high-temperature annealing, and high-temperature oxidation. The low dose makes possible a high-throughput production of SIMOX wafers. The high-temperature annealing provides a continuous buried oxide layer and reduces the dislocation density in the top silicon layer. The subsequent high-temperature oxidation thickens the buried oxide layer without any additional oxygen implantation, thus improving its electrical properties. The ITOX mechanism is also described. It is concluded that the ITOX SIMOX wafers are very useful for fabricating ULSIs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.3 pp.364-369
- Publication Date
- 1997/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
- Category
- Wafer Technologies
Authors
Keyword
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Sadao NAKASHIMA, "High-Quality Low-Dose SIMOX Wafers" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 3, pp. 364-369, March 1997, doi: .
Abstract: This paper reviews the structure and electrical properties of high-quality Internal Thermal OXidation (ITOX)-processed low-dose Separation by IMplanted OXygen (SIMOX) wafers. The ITOX SIMOX process consists of three steps: low-dose oxygen implantation, high-temperature annealing, and high-temperature oxidation. The low dose makes possible a high-throughput production of SIMOX wafers. The high-temperature annealing provides a continuous buried oxide layer and reduces the dislocation density in the top silicon layer. The subsequent high-temperature oxidation thickens the buried oxide layer without any additional oxygen implantation, thus improving its electrical properties. The ITOX mechanism is also described. It is concluded that the ITOX SIMOX wafers are very useful for fabricating ULSIs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_3_364/_p
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@ARTICLE{e80-c_3_364,
author={Sadao NAKASHIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Quality Low-Dose SIMOX Wafers},
year={1997},
volume={E80-C},
number={3},
pages={364-369},
abstract={This paper reviews the structure and electrical properties of high-quality Internal Thermal OXidation (ITOX)-processed low-dose Separation by IMplanted OXygen (SIMOX) wafers. The ITOX SIMOX process consists of three steps: low-dose oxygen implantation, high-temperature annealing, and high-temperature oxidation. The low dose makes possible a high-throughput production of SIMOX wafers. The high-temperature annealing provides a continuous buried oxide layer and reduces the dislocation density in the top silicon layer. The subsequent high-temperature oxidation thickens the buried oxide layer without any additional oxygen implantation, thus improving its electrical properties. The ITOX mechanism is also described. It is concluded that the ITOX SIMOX wafers are very useful for fabricating ULSIs.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - High-Quality Low-Dose SIMOX Wafers
T2 - IEICE TRANSACTIONS on Electronics
SP - 364
EP - 369
AU - Sadao NAKASHIMA
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1997
AB - This paper reviews the structure and electrical properties of high-quality Internal Thermal OXidation (ITOX)-processed low-dose Separation by IMplanted OXygen (SIMOX) wafers. The ITOX SIMOX process consists of three steps: low-dose oxygen implantation, high-temperature annealing, and high-temperature oxidation. The low dose makes possible a high-throughput production of SIMOX wafers. The high-temperature annealing provides a continuous buried oxide layer and reduces the dislocation density in the top silicon layer. The subsequent high-temperature oxidation thickens the buried oxide layer without any additional oxygen implantation, thus improving its electrical properties. The ITOX mechanism is also described. It is concluded that the ITOX SIMOX wafers are very useful for fabricating ULSIs.
ER -
English
