Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach

Tsukasa OOOKA; Hideyuki IWATA; Takashi OHZONE

Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach

Tsukasa OOOKA, Hideyuki IWATA, Takashi OHZONE

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Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400 K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200 K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.3 pp.417-422

Publication Date: 1997/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)

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Tsukasa OOOKA, Hideyuki IWATA, Takashi OHZONE, "Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 3, pp. 417-422, March 1997, doi: .
Abstract: Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400 K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200 K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_3_417/_p

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@ARTICLE{e80-c_3_417,
author={Tsukasa OOOKA, Hideyuki IWATA, Takashi OHZONE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach},
year={1997},
volume={E80-C},
number={3},
pages={417-422},
abstract={Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400 K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200 K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach
T2 - IEICE TRANSACTIONS on Electronics
SP - 417
EP - 422
AU - Tsukasa OOOKA
AU - Hideyuki IWATA
AU - Takashi OHZONE
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1997
AB - Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400 K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200 K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.
ER -