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[Keyword] numerical simulation(13hit)

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  • Lossless Compression of Double-Precision Floating-Point Data for Numerical Simulations: Highly Parallelizable Algorithms for GPU Computing

    Mamoru OHARA  Takashi YAMAGUCHI  

     
    PAPER-Parallel and Distributed Computing

      Vol:
    E95-D No:12
      Page(s):
    2778-2786

    In numerical simulations using massively parallel computers like GPGPU (General-Purpose computing on Graphics Processing Units), we often need to transfer computational results from external devices such as GPUs to the main memory or secondary storage of the host machine. Since size of the computation results is sometimes unacceptably large to hold them, it is desired that the data is compressed and stored. In addition, considering overheads for transferring data between the devices and host memories, it is preferable that the data is compressed in a part of parallel computation performed on the devices. Traditional compression methods for floating-point numbers do not always show good parallelism. In this paper, we propose a new compression method for massively-parallel simulations running on GPUs, in which we combine a few successive floating-point numbers and interleave them to improve compression efficiency. We also present numerical examples of compression ratio and throughput obtained from experimental implementations of the proposed method runnig on CPUs and GPUs.

  • Numerical Study of APSK Format for Long-Haul Transmission and Its Performance Improvement by Zero-Nulling Method

    Hidenori TAGA  Jyun-Yi WU  Wei-Tong SHIH  Seng-Sheng SHU  

     
    PAPER

      Vol:
    E91-B No:7
      Page(s):
    2165-2168

    Transmission performance of amplitude and phase shift keying (APSK) format is studied theoretically. The extinction ratio of the amplitude shift keying (ASK) signal of the APSK format causes a trade-off of the performance between the ASK and the phase shift keying (PSK) signal of the APSK format. Then, zero-nulling method is proposed to improve the performance of the APSK format, and its effectiveness is confirmed by the numerical simulation.

  • Accurate Thickness Measurement of Two Adjacent Sheet Structures in CT Images

    Yuanzhi CHENG  Yoshinobu SATO  Hisashi TANAKA  Takashi NISHII  Nobuhiko SUGANO  Hironobu NAKAMURA  Hideki YOSHIKAWA  Shuguo WANG  Shinichi TAMURA  

     
    PAPER

      Vol:
    E90-D No:1
      Page(s):
    271-282

    Accurate thickness measurement of sheet-like structure such as articular cartilage in CT images is required in clinical diagnosis as well as in fundamental research. Using a conventional measurement method based on the zero-crossing edge detection (zero-crossings method), several studies have already analyzed the accuracy limitation on thickness measurement of the single sheet structure that is not influenced by peripheral structures. However, no studies, as of yet, have assessed measurement accuracy of two adjacent sheet structures such as femoral and acetabular cartilages in the hip joint. In this paper, we present a model of the CT scanning process of two parallel sheet structures separated by a small distance, and use the model to predict the shape of the gray-level profiles along the sheet normal orientation. The difference between the predicted and the actual gray-level profiles observed in the CT data is minimized by refining the model parameters. Both a one-by-one search (exhaustive combination search) technique and a nonlinear optimization technique based on the Levenberg-Marquardt algorithm are used to minimize the difference. Using CT images of phantoms, we present results showing that when applying the one-by-one search method to obtain the initial values of the model parameters, Levenberg-Marquardt method is more accurate than zero-crossings and one-by-one search methods for estimating the thickness of two adjacent sheet structures, as well as the thickness of a single sheet structure.

  • 3D Simulations of Optical Near-Field Distributions of Planar Objects by Volume Integral Equation

    Mengyun YAN  Kazuo TANAKA  Masahiro TANAKA  

     
    PAPER

      Vol:
    E85-C No:12
      Page(s):
    2047-2054

    Optical near-field distributions of planar dielectric and metallic objects placed on a large dielectric substrate plate have been calculated by the volume integral equation using an iterative method called generalized minimal residual method with the fast Fourier transform technique. The basic characteristics of the near-field have been investigated in detail for large and small objects, dielectric and metallic objects and incident p-polarized and s-polarized evanescent fields.

  • Numerical Simulation of Electromagnetic Scattering from a Random Rough Surface Cylinder

    Hiromi ARITA  Toshitaka KOJIMA  

     
    LETTER-Rough Surface Scattering

      Vol:
    E83-C No:12
      Page(s):
    1855-1857

    In this paper, the electromagnetic scattering from a cylinder with a computer-generated random rough surface is analyzed by a numerical simulation method. The validity of the proposed numerical method is confirmed by comparing the present numerical results with those calculated by the perturbation method to second order and its Pade approximation. It is shown that the present proposed method can be applied to the case where the surface roughness becomes relatively large.

  • Energy Loss Mechanisms in AC-PDP Discharges

    Markus H. KLEIN  Rob J. M. M. SNIJKERS  Gerjan J. M. HAGELAAR  

     
    PAPER

      Vol:
    E83-C No:10
      Page(s):
    1602-1607

    Low luminous efficacy is one of the major drawbacks of PDPs, with the discharge being the predominant limiting factor. Numeric simulations granting deeper insight in the core processes of the discharge are presented and the key parameters influencing the plasma efficiency are examined.

  • Ultrafast Optical TDM Networking: Extension to the Wide Area

    John D. MOORES  Jeff KORN  Katherine L. HALL  Steven G. FINN  Kristin A. RAUSCHENBACH  

     
    INVITED PAPER-Photonic Networking

      Vol:
    E82-B No:2
      Page(s):
    209-221

    Recent work in the area of ultrafast optical time-division multiplexed (OTDM) networking at MIT Lincoln Laboratory is presented. A scalable helical local area network or HLAN architecture, presented elsewhere as an architecture well-suited to ultrafast OTDM LANs and MANs, is considered in the context of wide area networking. Two issues arise in scaling HLAN to the wide area. The first is protocol extension, and the second is supporting the required bandwidth on the long-haul links. In this paper we discuss these challenges and describe progress made in both architecture and technologies required for scaling HLAN to the wide area.

  • Ultrafast Optical TDM Networking: Extension to the Wide Area

    John D. MOORES  Jeff KORN  Katherine L. HALL  Steven G. FINN  Kristin A. RAUSCHENBACH  

     
    INVITED PAPER-Photonic Networking

      Vol:
    E82-C No:2
      Page(s):
    157-169

    Recent work in the area of ultrafast optical time-division multiplexed (OTDM) networking at MIT Lincoln Laboratory is presented. A scalable helical local area network or HLAN architecture, presented elsewhere as an architecture well-suited to ultrafast OTDM LANs and MANs, is considered in the context of wide area networking. Two issues arise in scaling HLAN to the wide area. The first is protocol extension, and the second is supporting the required bandwidth on the long-haul links. In this paper we discuss these challenges and describe progress made in both architecture and technologies required for scaling HLAN to the wide area.

  • Straight-Line Experiment and Numerical Simulation for RZ-Signal Long-Distance Transmission with Periodic Dispersion Compensation

    Akira NAKA  Toshiya MATSUDA  Shigeru SAITO  

     
    PAPER-Optical Communication

      Vol:
    E81-B No:4
      Page(s):
    722-728

    RZ signal transmission in an anomalous region with periodic dispersion compensation is examined by a straight-line experiment in terms of the compensation ratio, the signal power, and the pulse width. The optimum condition enables single-channel 20-Gbit/s RZ signal and two-WDM-channel 20-Gbit/s signals (40-Gbit/s in total) to be transmitted over 5,520 km and 2,160 km, respectively. Numerical simulations with the assistance of a basic theory enables analysis of the experimental results. It is shown that the balance between the waveform distortion and the remaining Gordon-Haus jitter determines the optimum conditions to achieve the longest transmission distance. Excess dispersion compensation results in waveform distortion, while insufficient compensation causes a greater amount of remaining jitter. Moreover, spectrum deformation during propagation is experimentally and numerically clarified to have a large effect on the transmission performance, especially for WDM transmission.

  • Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach

    Tsukasa OOOKA  Hideyuki IWATA  Takashi OHZONE  

     
    PAPER

      Vol:
    E80-C No:3
      Page(s):
    417-422

    Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400 K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200 K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.

  • Numerical Simulation of Low-Altitude Wind Shears for a Terminal Doppler Weather Radar System

    Yasuyoshi HORIBATA  Hiroshi OIKAWA  

     
    PAPER

      Vol:
    E79-B No:6
      Page(s):
    801-809

    Several major aircraft accidents have been attributed to low-altitude wind shears, which are normally caused by microbursts or gust fronts. Terminal Doppler Weather Radar (TDWR) systems are being installed near major airports for the detection of low-altitude wind shears. In order to develop a TDWR system further, low-altitude wind shears were numerically simulated in this study. The basic equations, which contain prognostic equations for air velocity, pressure, temperature, water vapor, and rainwater, were solved using a finite difference scheme. A terrain-following coordinate transformation was employed to simulate terrain effects. The simulation results are presented in this paper.

  • Validation and Ground Truth for TRMM Precipitation Radar Using the MU Radar

    Toru SATO  Toshihiro TERAOKA  Iwane KIMURA  

     
    PAPER

      Vol:
    E79-B No:6
      Page(s):
    744-750

    The MU radar of Japan is one of important candidates for providing accurate ground truth for the TRMM precipitation radar. It can provide the dropsize distribution data together with the background atmospheric wind data with high accuracy and high spatial resolution. Special observation scheme developed for TRMM validation using the MU radar is described, and preliminary results from its test experiment are shown. The high-resolution MU radar data are also used in numerical simulations to validate the rain retrieval algorithm for the TRMM PR data analysis. Among known sources of errors in the rain retrieval, the vertical variability of the dropsize distribution and the partial beam-filling effect are examined in terms of their significance with numerical simulations based on the MU radar data. It is shown that these factors may seriously affect the accuracy of the TRMM rain retrieval, and that it is necessary to establish statistical means for compensation. However, suggested means to improve the conventional α-adjustment method require careful treatment so that they do not introduce new sources of errors.

  • Analysis of Localized Temperature Distribution in SOI Devices

    Hizuru YAMAGUCHI  Shigeki HIRASAWA  Nobuo OWADA  Nobuyoshi NATSUAKI  

     
    PAPER-SOI Devices

      Vol:
    E75-C No:12
      Page(s):
    1438-1441

    Localized temperature distribution in silicon on insulator (SOI) structures with trench isolations is calculated using three-dimensional computer simulation. Temperature rise in SOI transistors is about three times higher than in conventional structure transistors because the thermal conductivity of SiO2 is very low. If there are voids in the SiO2 layers and trench isolations, temperature in the SOI transistors increases significantly. A simple model is proposed to calculate steady-state temperature rise in SOI transistors.