Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Summary :
Device design to reduce the abnormal operation due to the floating body effect was investigated for 0.2µm fully depleted SOI-MOSFETs, by use of a two-dimensional device simulator. It was found that the critical drain voltage and the critical multiplication factor for the floating body effect strongly depend on the potential profile which is related to the doping concentration. Based on simulation results, a nonuniformly doped structure is proposed for optimizing the potential profile to reduce the floating body effect. The applicable voltage of this structure was found to be 40% higher than that of the uniformly doped structure. A simple model is also derived to explain the above result.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E80-C No.7 pp.893-898
- Publication Date
- 1997/07/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
- Category
- Novel Structure Devices
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Risho KOH, Tohru MOGAMI, Haruo KATO, "Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 7, pp. 893-898, July 1997, doi: .
Abstract: Device design to reduce the abnormal operation due to the floating body effect was investigated for 0.2µm fully depleted SOI-MOSFETs, by use of a two-dimensional device simulator. It was found that the critical drain voltage and the critical multiplication factor for the floating body effect strongly depend on the potential profile which is related to the doping concentration. Based on simulation results, a nonuniformly doped structure is proposed for optimizing the potential profile to reduce the floating body effect. The applicable voltage of this structure was found to be 40% higher than that of the uniformly doped structure. A simple model is also derived to explain the above result.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_7_893/_p
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@ARTICLE{e80-c_7_893,
author={Risho KOH, Tohru MOGAMI, Haruo KATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs},
year={1997},
volume={E80-C},
number={7},
pages={893-898},
abstract={Device design to reduce the abnormal operation due to the floating body effect was investigated for 0.2µm fully depleted SOI-MOSFETs, by use of a two-dimensional device simulator. It was found that the critical drain voltage and the critical multiplication factor for the floating body effect strongly depend on the potential profile which is related to the doping concentration. Based on simulation results, a nonuniformly doped structure is proposed for optimizing the potential profile to reduce the floating body effect. The applicable voltage of this structure was found to be 40% higher than that of the uniformly doped structure. A simple model is also derived to explain the above result.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 893
EP - 898
AU - Risho KOH
AU - Tohru MOGAMI
AU - Haruo KATO
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1997
AB - Device design to reduce the abnormal operation due to the floating body effect was investigated for 0.2µm fully depleted SOI-MOSFETs, by use of a two-dimensional device simulator. It was found that the critical drain voltage and the critical multiplication factor for the floating body effect strongly depend on the potential profile which is related to the doping concentration. Based on simulation results, a nonuniformly doped structure is proposed for optimizing the potential profile to reduce the floating body effect. The applicable voltage of this structure was found to be 40% higher than that of the uniformly doped structure. A simple model is also derived to explain the above result.
ER -
English
