This paper demonstrates a polyimide/alumina-ceramic multilayer MIC analog phase shifter with a large phase shift. First, a novel active inductor, similar to the previously reported active inductor but with a shunt variable resistor inserted in the feedback loop, is proposed for miniaturizing the circuit. The chip size of the fabricated GaAs MESFET active inductor is less than 0. 52 mm2. Next, a low-loss analog phase shifter with a large phase shift is presented. This is constructed in an MIC structure with the active inductors, the varactor diodes and the low-loss polyimide/alumina-ceramic multilayer broad-side coupler. Furthermore, since the amount of the phase shift is the sum of the two individual tuning ranges attributed to the active inductors and varactor diodes, a large phase shift is obtained compared to the case where only the varactor diodes are tunable. Thus, a phase shift of more than 270
MIC, phase, shifter, multilayer, analog
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Hitoshi HAYASHI, Masahiro MURAGUCHI, "A Polyimide/Alumina-Ceramic Multilayer MIC Analog Phase Shifter with a Large Phase Shift" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 6, pp. 841-847, June 1998, doi: .
Abstract: This paper demonstrates a polyimide/alumina-ceramic multilayer MIC analog phase shifter with a large phase shift. First, a novel active inductor, similar to the previously reported active inductor but with a shunt variable resistor inserted in the feedback loop, is proposed for miniaturizing the circuit. The chip size of the fabricated GaAs MESFET active inductor is less than 0. 52 mm2. Next, a low-loss analog phase shifter with a large phase shift is presented. This is constructed in an MIC structure with the active inductors, the varactor diodes and the low-loss polyimide/alumina-ceramic multilayer broad-side coupler. Furthermore, since the amount of the phase shift is the sum of the two individual tuning ranges attributed to the active inductors and varactor diodes, a large phase shift is obtained compared to the case where only the varactor diodes are tunable. Thus, a phase shift of more than 270
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_6_841/_p
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@ARTICLE{e81-c_6_841,
author={Hitoshi HAYASHI, Masahiro MURAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Polyimide/Alumina-Ceramic Multilayer MIC Analog Phase Shifter with a Large Phase Shift},
year={1998},
volume={E81-C},
number={6},
pages={841-847},
abstract={This paper demonstrates a polyimide/alumina-ceramic multilayer MIC analog phase shifter with a large phase shift. First, a novel active inductor, similar to the previously reported active inductor but with a shunt variable resistor inserted in the feedback loop, is proposed for miniaturizing the circuit. The chip size of the fabricated GaAs MESFET active inductor is less than 0. 52 mm2. Next, a low-loss analog phase shifter with a large phase shift is presented. This is constructed in an MIC structure with the active inductors, the varactor diodes and the low-loss polyimide/alumina-ceramic multilayer broad-side coupler. Furthermore, since the amount of the phase shift is the sum of the two individual tuning ranges attributed to the active inductors and varactor diodes, a large phase shift is obtained compared to the case where only the varactor diodes are tunable. Thus, a phase shift of more than 270
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - A Polyimide/Alumina-Ceramic Multilayer MIC Analog Phase Shifter with a Large Phase Shift
T2 - IEICE TRANSACTIONS on Electronics
SP - 841
EP - 847
AU - Hitoshi HAYASHI
AU - Masahiro MURAGUCHI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1998
AB - This paper demonstrates a polyimide/alumina-ceramic multilayer MIC analog phase shifter with a large phase shift. First, a novel active inductor, similar to the previously reported active inductor but with a shunt variable resistor inserted in the feedback loop, is proposed for miniaturizing the circuit. The chip size of the fabricated GaAs MESFET active inductor is less than 0. 52 mm2. Next, a low-loss analog phase shifter with a large phase shift is presented. This is constructed in an MIC structure with the active inductors, the varactor diodes and the low-loss polyimide/alumina-ceramic multilayer broad-side coupler. Furthermore, since the amount of the phase shift is the sum of the two individual tuning ranges attributed to the active inductors and varactor diodes, a large phase shift is obtained compared to the case where only the varactor diodes are tunable. Thus, a phase shift of more than 270
ER -