Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors

Noren PAN; Roger E. WELSER; Charles R. LUTZ; James ELLIOT; Jesse P. RODRIGUES

Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors

Noren PAN, Roger E. WELSER, Charles R. LUTZ, James ELLIOT, Jesse P. RODRIGUES

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Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250) and large current densities (>50 kA/cm²), InGaP emitter HBTs are the preferred devices. The excellent reliability of InGaP/GaAs HBTs has been confirmed at various laboratories. At a moderate current density and junction temperature, J_c = 25 kA/cm² and T_j = 264, no device failures were reported out to 10,000 hours in a sample of 10 devices. Reliability testing performed up to a junction temperature of 360 and at a higher current density (J_c = 60 kA/cm²) showed an extrapolated MTTF of 5 10⁵ hours at T_j = 150. The activation energy for AlGaAs/GaAs HBTs was 0.57 eV, while the activation energy for InGaP/GaAs HBTs was 0.68 eV, which indicated a similar failure mechanism for both devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.11 pp.1886-1894

Publication Date: 1999/11/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)

Category: RF Power Devices

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Noren PAN, Roger E. WELSER, Charles R. LUTZ, James ELLIOT, Jesse P. RODRIGUES, "Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 11, pp. 1886-1894, November 1999, doi: .
Abstract: Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250) and large current densities (>50 kA/cm²), InGaP emitter HBTs are the preferred devices. The excellent reliability of InGaP/GaAs HBTs has been confirmed at various laboratories. At a moderate current density and junction temperature, J_c = 25 kA/cm² and T_j = 264, no device failures were reported out to 10,000 hours in a sample of 10 devices. Reliability testing performed up to a junction temperature of 360 and at a higher current density (J_c = 60 kA/cm²) showed an extrapolated MTTF of 5 10⁵ hours at T_j = 150. The activation energy for AlGaAs/GaAs HBTs was 0.57 eV, while the activation energy for InGaP/GaAs HBTs was 0.68 eV, which indicated a similar failure mechanism for both devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1886/_p

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@ARTICLE{e82-c_11_1886,
author={Noren PAN, Roger E. WELSER, Charles R. LUTZ, James ELLIOT, Jesse P. RODRIGUES, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors},
year={1999},
volume={E82-C},
number={11},
pages={1886-1894},
abstract={Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250) and large current densities (>50 kA/cm²), InGaP emitter HBTs are the preferred devices. The excellent reliability of InGaP/GaAs HBTs has been confirmed at various laboratories. At a moderate current density and junction temperature, J_c = 25 kA/cm² and T_j = 264, no device failures were reported out to 10,000 hours in a sample of 10 devices. Reliability testing performed up to a junction temperature of 360 and at a higher current density (J_c = 60 kA/cm²) showed an extrapolated MTTF of 5 10⁵ hours at T_j = 150. The activation energy for AlGaAs/GaAs HBTs was 0.57 eV, while the activation energy for InGaP/GaAs HBTs was 0.68 eV, which indicated a similar failure mechanism for both devices.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1886
EP - 1894
AU - Noren PAN
AU - Roger E. WELSER
AU - Charles R. LUTZ
AU - James ELLIOT
AU - Jesse P. RODRIGUES
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250) and large current densities (>50 kA/cm²), InGaP emitter HBTs are the preferred devices. The excellent reliability of InGaP/GaAs HBTs has been confirmed at various laboratories. At a moderate current density and junction temperature, J_c = 25 kA/cm² and T_j = 264, no device failures were reported out to 10,000 hours in a sample of 10 devices. Reliability testing performed up to a junction temperature of 360 and at a higher current density (J_c = 60 kA/cm²) showed an extrapolated MTTF of 5 10⁵ hours at T_j = 150. The activation energy for AlGaAs/GaAs HBTs was 0.57 eV, while the activation energy for InGaP/GaAs HBTs was 0.68 eV, which indicated a similar failure mechanism for both devices.
ER -