Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones

Kazukiyo JOSHIN; Yasuhiro NAKASHA; Taisuke IWAI; Takumi MIYASHITA; Shiro OHARA

Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones

Kazukiyo JOSHIN, Yasuhiro NAKASHA, Taisuke IWAI, Takumi MIYASHITA, Shiro OHARA

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Second harmonic signal feedback technique is applied to an HBT power amplifier for Wide-band CDMA (W-CDMA) mobile communication system to improve its linearity and efficiency. This paper describes the feedback effect of the 2nd harmonic signal from the output of the amplifier to the input on the 3rd order intermodulation distortion (IMD) products and Adjacent Channel leakage Power (ACP) of the power amplifier. The feedback amplifier, using an InGaP/GaAs HBT with 48 fingers of 3 20 µ m emitter, exhibits a 10 dB reduction in the level of the 3rd order IMD products. In addition, an ACP improvement of 7 dB for the QPSK modulation signal with a chip rate of 4.096 Mcps at 1.95 GHz was realized. As a result, the amplifier achieves a power-added efficiency of 41.5%, gain of 15.3 dB, and ACP of 43.0 dBc at a 5 MHz offset frequency and output power of 27.5 dBm. At the output power of 28 dBm, the power-added efficiency increases to 43.3% with an ACP of 40.8 dBc.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.5 pp.725-729

Publication Date: 1999/05/25

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Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)

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Kazukiyo JOSHIN, Yasuhiro NAKASHA, Taisuke IWAI, Takumi MIYASHITA, Shiro OHARA, "Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 5, pp. 725-729, May 1999, doi: .
Abstract: Second harmonic signal feedback technique is applied to an HBT power amplifier for Wide-band CDMA (W-CDMA) mobile communication system to improve its linearity and efficiency. This paper describes the feedback effect of the 2nd harmonic signal from the output of the amplifier to the input on the 3rd order intermodulation distortion (IMD) products and Adjacent Channel leakage Power (ACP) of the power amplifier. The feedback amplifier, using an InGaP/GaAs HBT with 48 fingers of 3 20 µ m emitter, exhibits a 10 dB reduction in the level of the 3rd order IMD products. In addition, an ACP improvement of 7 dB for the QPSK modulation signal with a chip rate of 4.096 Mcps at 1.95 GHz was realized. As a result, the amplifier achieves a power-added efficiency of 41.5%, gain of 15.3 dB, and ACP of 43.0 dBc at a 5 MHz offset frequency and output power of 27.5 dBm. At the output power of 28 dBm, the power-added efficiency increases to 43.3% with an ACP of 40.8 dBc.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_725/_p

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@ARTICLE{e82-c_5_725,
author={Kazukiyo JOSHIN, Yasuhiro NAKASHA, Taisuke IWAI, Takumi MIYASHITA, Shiro OHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones},
year={1999},
volume={E82-C},
number={5},
pages={725-729},
abstract={Second harmonic signal feedback technique is applied to an HBT power amplifier for Wide-band CDMA (W-CDMA) mobile communication system to improve its linearity and efficiency. This paper describes the feedback effect of the 2nd harmonic signal from the output of the amplifier to the input on the 3rd order intermodulation distortion (IMD) products and Adjacent Channel leakage Power (ACP) of the power amplifier. The feedback amplifier, using an InGaP/GaAs HBT with 48 fingers of 3 20 µ m emitter, exhibits a 10 dB reduction in the level of the 3rd order IMD products. In addition, an ACP improvement of 7 dB for the QPSK modulation signal with a chip rate of 4.096 Mcps at 1.95 GHz was realized. As a result, the amplifier achieves a power-added efficiency of 41.5%, gain of 15.3 dB, and ACP of 43.0 dBc at a 5 MHz offset frequency and output power of 27.5 dBm. At the output power of 28 dBm, the power-added efficiency increases to 43.3% with an ACP of 40.8 dBc.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones
T2 - IEICE TRANSACTIONS on Electronics
SP - 725
EP - 729
AU - Kazukiyo JOSHIN
AU - Yasuhiro NAKASHA
AU - Taisuke IWAI
AU - Takumi MIYASHITA
AU - Shiro OHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - Second harmonic signal feedback technique is applied to an HBT power amplifier for Wide-band CDMA (W-CDMA) mobile communication system to improve its linearity and efficiency. This paper describes the feedback effect of the 2nd harmonic signal from the output of the amplifier to the input on the 3rd order intermodulation distortion (IMD) products and Adjacent Channel leakage Power (ACP) of the power amplifier. The feedback amplifier, using an InGaP/GaAs HBT with 48 fingers of 3 20 µ m emitter, exhibits a 10 dB reduction in the level of the 3rd order IMD products. In addition, an ACP improvement of 7 dB for the QPSK modulation signal with a chip rate of 4.096 Mcps at 1.95 GHz was realized. As a result, the amplifier achieves a power-added efficiency of 41.5%, gain of 15.3 dB, and ACP of 43.0 dBc at a 5 MHz offset frequency and output power of 27.5 dBm. At the output power of 28 dBm, the power-added efficiency increases to 43.3% with an ACP of 40.8 dBc.
ER -